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公开(公告)号：US12124163B2
公开(公告)日：2024-10-22
申请号：US18359954
申请日：2023-07-27
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US20240319583A1
公开(公告)日：2024-09-26
申请号：US18607213
申请日：2024-03-15
发明人： TORU KOBAYASHI
IPC分类号： G03F1/38
CPC分类号： G03F1/38
摘要： An original includes a pattern formed for use in exposure of a photosensitive material disposed on an upper side of a multilayer film provided on a substrate, wherein the pattern includes a main pattern and an auxiliary pattern disposed at a position separated by a predetermined interval from the main pattern, and wherein the auxiliary pattern suppresses irregularities on an inclined surface of a sidewall portion of the photosensitive material on which the main pattern is formed.
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公开(公告)号：US20240319408A1
公开(公告)日：2024-09-26
申请号：US18187925
申请日：2023-03-22
发明人： Chin-Chen KUO , Sheng-Wei WANG , Tsung-Hsiu WU , Yun-Hui TAI
摘要： An anti-scattering and anti-interference coating pattern structure of an optical film, wherein an optical film is formed on a substrate, the characterize is: the periphery of the optical film is a non-straight zigzag lines or multi-curved inner edge lines, such that can be used to reduce stray light affecting the sensing area when it is used in light-sensing components.
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公开(公告)号：US20240280908A1
公开(公告)日：2024-08-22
申请号：US18649060
申请日：2024-04-29
申请人： PHOTRONICS, INC.
CPC分类号： G03F7/2002 , G03F1/38 , G03F1/62 , G03F1/64
摘要： A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.
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公开(公告)号：US12044933B2
公开(公告)日：2024-07-23
申请号：US15750847
申请日：2016-08-08
发明人： Qi-Huo Wei , Yubing Guo , Miao Jiang , Oleg Lavrentovich , Chenhui Peng , Kai Sun
IPC分类号： G02F1/1337 , B82Y40/00 , G02F1/13 , G03F1/38
CPC分类号： G02F1/133788 , G02F1/1303 , G03F1/38 , B82Y40/00 , G02F1/133753
摘要： A method for aligning molecular orientations of liquid crystals and/or polymeric materials into spatially variant patterns uses metamasks. When non-polarized or circularly polarized light is transmitted through or reflected by the metamasks, spatially varied polarization direction and intensity patterns of light can be generated. By projecting the optical patterns of the metamasks onto substrates coated with photoalignment materials, spatially variant molecular orientations encoded in the polarization and intensity patterns are induced in the photoalignment materials, and transfer into the liquid crystals. Possible designs for the metamask use nanostructures of metallic materials.
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公开(公告)号：US20240231218A1
公开(公告)日：2024-07-11
申请号：US18615130
申请日：2024-03-25
申请人： WESTLAKE UNIVERSITY
发明人： Xijun LI , Chunyan SONG
CPC分类号： G03F1/38 , G03F7/70291 , G03F7/70525
摘要： A mask (100), a lithographing apparatus, and a method for manufacturing a mask (100), wherein the mask (100) includes: an electrolytic reaction layer (110) including an electrochromic material; a first control circuit layer (120) provided on a first side of the electrolytic reaction layer (110) and including a plurality of first control electrodes (121, H1, H2, H3, H4); and a second control circuit layer (130) provided on a second side of the electrolytic reaction layer (110) that is opposite to the first side and including a plurality of second control electrodes (131, V1, V2, V3, V4), wherein a light-transmitting state of a pixel region in the mask (100) is configured to be decided by a control voltage between at least a part of the first control electrode (121, H1, H2, H3, H4) and at least a part of the second control electrode (131, V1, V2, V3, V4) contained in the pixel region, and the control voltage controls the light-transmitting state of the pixel region by controlling an ion-bonding state of the electrochromic material in the electrolytic reaction layer (110).
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公开(公告)号：US20240142870A1
公开(公告)日：2024-05-02
申请号：US18237648
申请日：2023-08-24
发明人： Yung-chen LIN , Zhiyu HUANG , Chi-I LANG , Ho-yung HWANG
摘要： Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and includes positioning a workpiece within a process region of a processing chamber, where the workpiece has a carbon hardmask layer disposed on or over an underlying layer, and treating the carbon hardmask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hardmask which is denser than the carbon hardmask layer. The SIS process includes exposing and infiltrating the carbon hardmask layer with an aluminum precursor, purging to remove gaseous remnants, exposing and infiltrating the carbon hardmask layer to an oxidizing agent to produce an aluminum oxide coating disposed on inner surfaces of the carbon hardmask layer, and purging the process region to remove gaseous remnants.
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公开(公告)号：US20240027925A1
公开(公告)日：2024-01-25
申请号：US18375281
申请日：2023-09-29
CPC分类号： G03F7/70925 , G03F1/38 , G03F1/82 , H01L21/67028
摘要： A method of protecting a component of a lithographic apparatus, the method including the steps of: providing a protective cover which is shaped to protect at least part of said component, the protective cover having a contact surface which is arranged to adhere to a first surface of at least part of said lithographic apparatus or said component; and bringing the protective cover into proximity with the component so as to cause the contact surface to adhere to the lithographic apparatus or said component and remain adhered without the application of external force. It is also provided a patterning device for use in a lithographic apparatus and a lithographic apparatus.
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公开(公告)号：US11860530B2
公开(公告)日：2024-01-02
申请号：US17809979
申请日：2022-06-30
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US20230408903A1
公开(公告)日：2023-12-21
申请号：US18309427
申请日：2023-04-28
申请人： SK enpulse Co., Ltd.
发明人： Seong Yoon KIM , GeonGon LEE , Min Gyo JEONG , Sung Hoon SON , Inkyun SHIN
CPC分类号： G03F1/38 , G03F1/68 , G03F7/706851 , G03F7/2047
摘要： A shadow mask includes a mask including one surface, another surface, and an opening that passes from one surface to the other, and a shutter provided on the one surface of the mask and configured to adjust a size of the opening, wherein the shutter is configured to move from an edge to a center of the opening to adjust the size of the opening, and the shadow mask is applied in manufacturing a blank mask for a semiconductor lithography process.
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