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    METHOD OF PROCESSING A SUBSTRATE
    1.
    发明公开
    METHOD OF PROCESSING A SUBSTRATE 审中-公开

    公开(公告)号：US20240004300A1

    公开(公告)日：2024-01-04

    申请号：US17855924

    申请日：2022-07-01

    申请人： NANYA TECHNOLOGY CORPORATION

    发明人： CHIH-YING TSAI ,  JUI-SENG WANG ,  YI-YI CHEN

    IPC分类号： G03F7/20 ,  H01L21/308 ,  H01L21/027 ,  G03F7/09

    CPC分类号： G03F7/2047 ,  H01L21/3086 ,  G03F7/70466 ,  H01L21/0274 ,  G03F7/091

    摘要： The present application provides a method of processing a substrate. The method of processing the substrate includes steps of forming a photosensitive layer on the substrate; performing a first exposure process to expose the photosensitive layer to actinic radiation through a first mask; performing a first developing process to remove portions of the photosensitive layer exposed to the actinic radiation and form an intermediate pattern; performing a second exposure process to expose the intermediate pattern to the actinic radiation through a second mask; performing a second developing process to remove portions of the intermediate pattern shielded from the actinic radiation and form a target pattern; and performing an etching process to remove portions of the substrate exposed by the target pattern.

    Semiconductor device fabrication method and fabrication apparatus using a stencil mask
    3.
    发明授权
    Semiconductor device fabrication method and fabrication apparatus using a stencil mask 失效
    半导体器件制造方法和使用模板掩模的制造装置

    公开(公告)号：US07501214B2

    公开(公告)日：2009-03-10

    申请号：US10969181

    申请日：2004-10-21

    申请人： Takeshi Shibata

    发明人： Takeshi Shibata

    IPC分类号： G03F9/00 ,  G03C5/00

    CPC分类号： G03F7/2047 ,  H01J37/3171 ,  H01J2237/31711 ,  H01L21/26586 ,  H01L21/266 ,  Y10S430/143

    摘要： A semiconductor device fabrication method includes preparing a substrate having a first circuit pattern of a semiconductor device; providing a mask with at least part of second circuit pattern of the semiconductor device; collimating incident direction of particles; changing at least one of the a substrate angle between a vertical axis of the substrate and the incident direction of the particles and a mask angle between a vertical axis of the mask and the incident direction so that the second circuit pattern on the mask can be aligned to the first circuit pattern on the substrate with a design margin; and selectively irradiating the particles to the substrate using the mask.

    摘要翻译： 一种半导体器件制造方法，包括：准备具有半导体器件的第一电路图案的衬底; 提供具有所述半导体器件的第二电路图案的至少一部分的掩模; 准直粒子的入射方向; 改变衬底的垂直轴和颗粒的入射方向之间的衬底角度和掩模的垂直轴与入射方向之间的掩模角度中的至少一个，使得掩模上的第二电路图案可以对准 到设计边缘的衬底上的第一电路图案; 并使用掩模将颗粒选择性地照射到基底上。

    Charged particle beam transfer apparatus
    5.
    发明授权
    Charged particle beam transfer apparatus 失效
    带电粒子束传送装置

    公开(公告)号：US5929457A

    公开(公告)日：1999-07-27

    申请号：US942688

    申请日：1997-09-29

    申请人： Teruaki Okino

    发明人： Teruaki Okino

    IPC分类号： G03F7/20 ,  G03F7/207 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2047 ,  H01J37/3174 ,  H01J2237/30455 ,  H01J2237/31764 ,  Y10S430/143

    摘要： A pattern transfer apparatus in which a part or all of a plurality of small areas on a mask are sequentially irradiated with a charged particle beam to transfer an image of a pattern provided in each of the irradiated small areas onto a radiation-sensitive substrate, e.g., a wafer. A pattern distribution condition is evaluated for each small area, and an image-formation condition of the pattern image with respect to the radiation-sensitive substrate is adjusted for each small area on the basis of predetermined information including a result of the evaluation.

    摘要翻译： 图案转印装置，其中掩模上的多个小区域的一部分或全部依次用带电粒子束照射，以将设置在每个照射的小区域中的图案的图像转印到辐射敏感基板上，例如 ，晶圆。 针对每个小区域评估图案分布条件，并且基于包括评估结果的预定信息，针对每个小区域调整图案图像相对于辐射敏感基板的图像形成条件。

    Method and system for controlled ultraviolet light exposure
    6.
    发明授权
    Method and system for controlled ultraviolet light exposure 有权

    公开(公告)号：US09971249B1

    公开(公告)日：2018-05-15

    申请号：US15443196

    申请日：2017-02-27

    申请人： Canon Kabushiki Kaisha

    发明人： Seth J. Bamesberger ,  Yeshwanth Srinivasan

    IPC分类号： G03F7/20 ,  G03F7/00

    CPC分类号： G03F7/7045 ,  G03F7/00 ,  G03F7/0002 ,  G03F7/2047 ,  G03F7/70033 ,  G03F7/7035

    摘要： Methods, systems, and apparatus for identifying a non-rectangular shape outline of a first field of a substrate, the first field directly adjacent to a second field; adjusting an exposure profile of an ultraviolet light beam based on the non-rectangular shape outline of the first field to provide a non-rectangular exposure profile of the ultraviolet light beam; disposing a polymerizable composition on the first field of the substrate; contacting the polymerizable composition in the first field with an imprint lithography template; and while contacting the polymerizable composition in the first field with the imprint lithography template, directing the ultraviolet light beam having the non-rectangular exposure profile towards the substrate such that the ultraviolet light beam irradiates only the first field of the substrate.

    METHOD FOR MAKING A MICRO- OR NANO-SCALE PATTERNED LAYER OF MATERIAL BY PHOTOLITHOGRAPHY
    8.
    发明申请
    METHOD FOR MAKING A MICRO- OR NANO-SCALE PATTERNED LAYER OF MATERIAL BY PHOTOLITHOGRAPHY 审中-公开

    公开(公告)号：US20170102617A1

    公开(公告)日：2017-04-13

    申请号：US14878915

    申请日：2015-10-08

    申请人： UNIV PARIS XIII PARIS-NORD VILLETANEUSE ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)

    发明人： Alexis FISCHER ,  Getachew AYENEW ,  Azzedine BOUDRIOUA ,  Jeanne SOLARD

    IPC分类号： G03F7/32 ,  G03F7/20

    CPC分类号： G03F7/2047 ,  G03F1/00

    摘要： The invention relates to a method for making a micro- or nano-scale patterned layer of material by photolitography, comprising steps of: positioning a photomask between a light source and a layer of light sensitive material, said mask comprising a support and a layer of micro- or nano-light focusing elements fixed to the support, activating the light source so that the light source emits light radiations through the mask towards a surface of the layer of light sensitive material, developing the layer of light sensitive material so as to obtain the micro- or nano-scale patterned layer of material, wherein, during exposure of the layer of light sensitive material to light radiations, the photomask is positioned relative to the light sensitive layer so that the distance between the surface of the light sensitive layer and the layer of micro- or nano-light focusing elements is greater than a back focal length of the micro- or nano-light focusing elements.

    Extreme ultraviolet/soft X-ray laser nano-scale patterning using the demagnified Talbot effect
    9.
    发明授权
    Extreme ultraviolet/soft X-ray laser nano-scale patterning using the demagnified Talbot effect 有权
    极端的紫外/软X射线激光纳米尺度图案化使用缩小的Talbot效应

    公开(公告)号：US09216590B2

    公开(公告)日：2015-12-22

    申请号：US14637004

    申请日：2015-03-03

    申请人： COLORADO STATE UNIVERSITY RESEARCH FOUNDATION ,  SYNOPSYS, INC.

    发明人： Mario C. Marconi ,  Lukasz Urbanski ,  Jorge J. Rocca ,  Artak Isoyan

    IPC分类号： G03F7/20 ,  B41J2/465

    CPC分类号： B41J2/465 ,  G03F7/2047 ,  G03F7/2053 ,  G03F7/7035 ,  G03F7/70408

    摘要： An apparatus and method for nanopatterning of substrates using the demagnified Talbot effect, wherein: (a) large arrays of nanostructures can rapidly be printed; (b) short extreme ultraviolet wavelengths permits sub-100 nm spatial resolution; (c) the de-magnification factor can be continuously adjusted, that is, continuously scaled; (d) the patterning is the effect of the collective diffraction of numerous tiled units that constitute the periodic array, giving rise to error resistance such that a defect in one unit is averaged over the area of the mask and the print does not show any defects; (e) the Talbot mask does not wear out since the method is non-contact; and (f) the feature sizes on the mask do not have to be as small as the feature sizes desired on the target, are described. The apparatus includes a source of coherent radiation having a chosen wavelength directed onto a focusing optic, the reflected converging light passing through a Talbot mask and impinging on a target substrate.

    摘要翻译： 一种用于使用缩小的Talbot效应对基底进行纳米图案化的装置和方法，其中：（a）可以快速地印刷大量纳米结构阵列; （b）短的极紫外波长允许亚100nm的空间分辨率; （c）可以连续地调整去放大系数，即连续缩放; （d）图形化是构成周期性阵列的多个平铺单元的集体衍射的影响，产生误差电阻，使得一个单元中的缺陷在掩模的区域上被平均，并且打印不显示任何缺陷 ; （e）Talbot面膜不会磨损，因为该方法是非接触的; 并且（f）掩模上的特征尺寸不必像目标上所需的特征尺寸一样小。 该装置包括具有指向聚焦光学元件的所选波长的相干辐射源，反射的会聚光穿过Talbot掩模并撞击目标基底。

    DEVICE FOR MANUFACTURING A SURFACE USING CHARACTER PROJECTION LITHOGRAPHY WITH VARIABLE MAGNIFICATION
    10.
    发明申请
    DEVICE FOR MANUFACTURING A SURFACE USING CHARACTER PROJECTION LITHOGRAPHY WITH VARIABLE MAGNIFICATION 有权
    使用可变放大的字符投影算法制作表面的设备

    公开(公告)号：US20140146298A1

    公开(公告)日：2014-05-29

    申请号：US13849219

    申请日：2013-03-22

    申请人： Akira Fujimura

    发明人： Akira Fujimura

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2047 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  Y10S430/143

    摘要： A device for charged particle beam lithography is disclosed which includes an inputting device, a character projection stencil and a reducing lens. The inputting device reads a set of shots, where each shot has a magnification. The character projection stencil contains a character pattern. The reducing lens introduces magnification variation of the stencil character pattern when writing the pattern onto a surface, where the magnification of the reducing lens can be varied from shot to shot.

    摘要翻译： 公开了一种用于带电粒子束光刻的装置，其包括输入装置，字符投影模板和还原透镜。 输入设备读取一组镜头，其中每个镜头具有放大倍率。 角色投影模板包含一个字符模式。 当将图案写入表面时，缩小透镜引入模板字符图案的放大率变化，其中减少透镜的放大倍率可以从镜头变化到射击。