PROCESS FOR DEPOSITING METAL ON A SUBSTRATE
    8.
    发明申请
    PROCESS FOR DEPOSITING METAL ON A SUBSTRATE 有权
    在基材上沉积金属的工艺

    公开(公告)号:US20160160066A1

    公开(公告)日:2016-06-09

    申请号:US14906670

    申请日:2014-07-16

    IPC分类号: C09D11/52 C23C16/06

    摘要: A process for depositing a metal on a substrate involves the use of two reduction reactions in a bottom-up based tandem manner starting from a substrate surface and working upward. A first reduction reaction starts on the substrate surface at ambient temperature, and a second reduction reaction, which is initiated by the reaction heat of the first reduction reaction, occurs in a reactive ink solution film coated on top, which becomes solid after the reaction. Gas and other small molecules generated from the reduction reactions, and the solvent, can readily escape through the upper surface of the film before the solid metal layer is formed or during post-treatment, with no or few voids left in the metal film. Thus, the process can be used to form highly conductive films and features at ambient temperature on various substrates.

    摘要翻译: 用于在基板上沉积金属的方法涉及以从底部向上串联的方式使用两个还原反应,从基板表面开始并向上工作。 第一还原反应在环境温度下在基材表面上开始,并且通过第一还原反应的反应热引发的第二还原反应发生在反应性油墨溶液膜上,反应性油墨溶液膜在反应后变成固体。 由还原反应产生的气体和其它小分子以及溶剂可以在形成固体金属层之前或在后处理期间容易地从薄膜的上表面逸出,而金属膜中没有留下或少量的空隙。 因此,该方法可用于在环境温度下在各种基材上形成高导电膜和特征。