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公开(公告)号：US20220064813A1
公开(公告)日：2022-03-03
申请号：US17166104
申请日：2021-02-03
发明人： Yun ZHANG , Xingxing ZHANG , Volker WOHLFARTH , Jing WANG , Peipei DONG , Wei ZHAO
摘要： A method of electroplating a stress-free copper film on a substrate includes: providing the substrate; providing an electroplating bath that includes a copper salt, an acid, a leveler, a chlorine compound, an accelerator, a suppressor; and water; heating the electroplating bath to 25 to 60° C.; and electroplating the substrate in the electroplating bath to form the stress-free copper film while maintaining the electroplating bath at 25 to 60° C. The leveler is an organic compound containing an amine group. The method further includes annealing the stress-free copper film at 60-260° C. for 0.5 to 2 hours, or at 60-120° C. for 0.5 to 2 hours. A stress-free electroplated copper film is also disclosed.
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公开(公告)号：US20240328023A1
公开(公告)日：2024-10-03
申请号：US18737789
申请日：2024-06-07
发明人： Yun ZHANG , Xingxing ZHANG , Volker WOHLFARTH , Jing WANG , Peipei DONG , Wei ZHAO
CPC分类号： C25D3/38 , C25D17/001 , H05K3/241
摘要： A method of electroplating a stress-free copper film on a substrate includes: providing the substrate; providing an electroplating bath that includes a copper salt, an acid, a leveler, a chlorine compound, an accelerator, a suppressor; and water; heating the electroplating bath to 25 to 60° C.; and electroplating the substrate in the electroplating bath to form the stress-free copper film while maintaining the electroplating bath at 25 to 60° C. The leveler is an organic compound containing an amine group. The method further includes annealing the stress-free copper film at 60-260° C. for 0.5 to 2 hours, or at 60-120° C. for 0.5 to 2 hours. A stress-free electroplated copper film is also disclosed.
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