METHOD OF ELECTROPLATING STRESS-FREE COPPER FILM

    公开(公告)号:US20220064813A1

    公开(公告)日:2022-03-03

    申请号:US17166104

    申请日:2021-02-03

    IPC分类号: C25D3/38 C25D17/00 H05K3/24

    摘要: A method of electroplating a stress-free copper film on a substrate includes: providing the substrate; providing an electroplating bath that includes a copper salt, an acid, a leveler, a chlorine compound, an accelerator, a suppressor; and water; heating the electroplating bath to 25 to 60° C.; and electroplating the substrate in the electroplating bath to form the stress-free copper film while maintaining the electroplating bath at 25 to 60° C. The leveler is an organic compound containing an amine group. The method further includes annealing the stress-free copper film at 60-260° C. for 0.5 to 2 hours, or at 60-120° C. for 0.5 to 2 hours. A stress-free electroplated copper film is also disclosed.

    METHOD FOR ELECTROPLATING NANOGRAINED COPPER

    公开(公告)号:US20230257896A1

    公开(公告)日:2023-08-17

    申请号:US17750790

    申请日:2022-05-23

    IPC分类号: C25D3/38 C25D5/48

    CPC分类号: C25D3/38 C25D5/48

    摘要: A method of electroplating nanograined copper on a substrate includes: providing the substrate; providing an electroplating bath that includes a copper salt, an acid, a leveler, a chlorine compound, an accelerator, a suppressor; and water; and electroplating the substrate in the electroplating bath to form the nanograined copper at room temperature. The suppressor is a ployether polyol compound, the nanograined copper has an average grain size of about 100 nm, and the nanograined copper has a resistivity of about 1.78-1.90 μOhm·cm. A nanograined copper prepared according to the method is also disclosed.