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公开(公告)号:US12038693B2
公开(公告)日:2024-07-16
申请号:US18197563
申请日:2023-05-15
发明人: Chien-Cheng Chen , Chia-Jen Chen , Hsin-Chang Lee , Shih-Ming Chang , Tran-Hui Shen , Yen-Cheng Ho , Chen-Shao Hsu
CPC分类号: G03F7/70441 , G03F1/36 , G03F1/78 , G03F1/76 , G03F7/2002 , G03F7/70358 , G03F7/70608 , G03F7/70616 , G03F7/70716 , H01J37/3174 , H01J2237/31771
摘要: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
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公开(公告)号:US12009174B2
公开(公告)日:2024-06-11
申请号:US17651278
申请日:2022-02-16
发明人: Kazuhiro Kishi , Munehiro Ogasawara
IPC分类号: H01J37/04 , H01J37/26 , H01J37/317
CPC分类号: H01J37/045 , H01J37/3174 , H01J37/26 , H01J2237/0435
摘要: A blanking deflector according to an embodiment includes: a first electrode comprising a first insulator, a first material film coating all surfaces of the first insulator and having lower resistance than the first insulator, and a first low-resistance film coating part or all of surfaces of the first material film and having lower resistance than the first material film; and a second electrode comprising a second insulator, a second material film coating all surfaces of the second insulator and having lower resistance than the second insulator, and a second low-resistance film coating part or all of surfaces of the second material film and having lower resistance than the second material film, wherein the blanking deflector controls whether to irradiate a specimen with a charged particle beam by causing the charged particle beam to pass between the first electrode and the second electrode.
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3.
公开(公告)号:US20240145212A1
公开(公告)日:2024-05-02
申请号:US18572776
申请日:2021-12-24
发明人: Masakazu HAMAJI , Issei MASUMOTO , Natsuki SUZUKI
IPC分类号: H01J37/153 , G03F7/00 , G03F7/20 , H01J37/317
CPC分类号: H01J37/153 , G03F7/2037 , G03F7/2061 , G03F7/70008 , G03F7/70508 , G03F7/7065 , H01J37/3174 , H01J2237/22
摘要: An electron beam lithography apparatus-includes: a density set storage unit that stores, for each of pieces of figure information, a set of pieces of first density information corresponding to areas occupied by a figure in first small regions divided from a figure region specified by the piece of figure information; a density set acquisition unit that acquires first density sets respectively corresponding to the pieces of figure information from the density set storage unit; a correction amount acquisition unit that acquires correction amounts corresponding to the first density sets for each of the pieces of figure information, and are for the second small regions; an emission amount acquisition unit that acquires, for the second small regions, emission amounts of an electron beam with intensities corresponding to the correction amounts for the second small regions; and a drawing unit that emits an electron beam according to the emission amounts.
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4.
公开(公告)号:US20240136148A1
公开(公告)日:2024-04-25
申请号:US18461180
申请日:2023-09-04
IPC分类号: H01J37/244 , H01J37/09 , H01J37/317
CPC分类号: H01J37/244 , H01J37/09 , H01J37/3174 , H01J2237/0451 , H01J2237/1501 , H01J2237/24564
摘要: In one embodiment, a beam detector includes a first aperture plate including a first passage hole, a second aperture plate including a second passage hole that allows a single detection target beam passing through the first passage hole to pass therethrough, and a sensor detecting a beam current of the detection target beam passing through the second passage hole. The second aperture plate includes an electrically conductive material, a plurality of third passage holes are formed around the second passage hole, and the plurality of third passage holes allow light to pass therethrough.
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5.
公开(公告)号:US20240096590A1
公开(公告)日:2024-03-21
申请号:US18460139
申请日:2023-09-01
发明人: Yasutaka SATO , Yuto ASAKURA
IPC分类号: H01J37/244 , G01B11/02 , H01J37/20 , H01J37/304 , H01J37/317
CPC分类号: H01J37/244 , G01B11/02 , H01J37/20 , H01J37/3045 , H01J37/3174 , H01J2237/202 , H01J2237/2446 , H01J2237/24578
摘要: In one embodiment, a length measurer includes a first laser interferometer provided in a wall surface of the writing chamber, synthesizes a laser beam with the first frequency which has traveled back and forth between the first laser interferometer and the stage and a laser beam with the second frequency reflected in the first laser interferometer, and outputs a first beat signal. A wall surface displacement measurer includes a second laser interferometer provided in the wall surface of the writing chamber, synthesizes a laser beam with the first frequency which has traveled back and forth between the second laser interferometer and a fixed mirror and a laser beam with the second frequency reflected in the second laser interferometer, and outputs a second beat signal. The position of the stage is calculated based on a difference between the first beat signal and the second beat signal.
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公开(公告)号:US11854764B2
公开(公告)日:2023-12-26
申请号:US17654834
申请日:2022-03-15
发明人: Junpei Yasuda , Naoto Wakui
IPC分类号: H01J37/147 , H01J37/317
CPC分类号: H01J37/3174 , H01J37/147
摘要: In one embodiment, a charged particle beam writing device writes sequentially patterns to a plurality of deflection positions on a target object by deflecting a charged particle beam by a deflector. The device includes a storage storing relation information indicating a relationship between a time elapsed since a start of deflection by the deflector and an amount of position shift in a shot position to which the charged particle beam is shot, a shot position corrector obtaining a first amount of position shift corresponding to an n-th (where n is an integer greater than or equal to 2) deflection position in sequential pattern writing and a second amount of position shift corresponding to an n−1-th deflection position by using by using a settling time and a shot time of the deflector and the relation information, obtaining an amount of position correction by adding up the first amount of position shift and the second amount of position shift, and correcting a shot position, and a writer emitting the charged particle beam to the n-th deflection position by using the shot data for which the shot position has been corrected, and writing a pattern.
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公开(公告)号:US20230288813A1
公开(公告)日:2023-09-14
申请号:US18197563
申请日:2023-05-15
发明人: Chien-Cheng CHEN , Chia-Jen CHEN , Hsin-Chang LEE , Shih-Ming CHANG , Tran-Hui SHEN , Yen-Cheng HO , Chen-Shao HSU
CPC分类号: G03F7/70441 , G03F1/36 , G03F1/78 , H01J37/3174
摘要: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
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公开(公告)号:US11749491B2
公开(公告)日:2023-09-05
申请号:US17577630
申请日:2022-01-18
IPC分类号: H01J37/073 , H01J37/317
CPC分类号: H01J37/073 , H01J37/3174 , H01J2237/06333
摘要: An electron beam writing apparatus comprising, a cathode configured to emit an electron beam, a condition controller configured to change a condition under which the electron beam is emitted from the cathode in a plurality of ways, and a prediction unit configured to predict a life span of the cathode based on a temporal change in an amount of fluctuation of a beam characteristic of the electron beam to a change in the condition when the condition is changed.
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公开(公告)号:US11715615B2
公开(公告)日:2023-08-01
申请号:US17858943
申请日:2022-07-06
申请人: KLA Corporation
发明人: Edgardo Garcia Berrios , J. Joseph Armstrong , Yinying Xiao-Li , John Fielden , Yung-Ho Alex Chuang
IPC分类号: H01J1/304 , H01J3/02 , H01J37/073 , H01J35/06 , H01J37/28 , H01J37/317
CPC分类号: H01J1/3044 , H01J3/022 , H01J37/073 , H01J35/065 , H01J37/28 , H01J37/3174
摘要: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.
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10.
公开(公告)号:US11705301B2
公开(公告)日:2023-07-18
申请号:US17152480
申请日:2021-01-19
发明人: Benjamin John Cook
IPC分类号: H01J37/14 , H01J37/145 , H01J37/147 , H01J37/317
CPC分类号: H01J37/145 , H01J37/1471 , H01J37/3174 , H01J2237/0453 , H01J2237/141 , H01J2237/1516
摘要: It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.
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