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公开(公告)号：US12072606B2
公开(公告)日：2024-08-27
申请号：US17862133
申请日：2022-07-11
申请人： KLA Corporation
发明人： John Fielden , Yung-Ho Alex Chuang
CPC分类号： G02F1/3551 , G01N21/9501 , G03F7/7015 , G03F7/70591 , G01N2201/068
摘要： An amorphous layer is used as a protective coating for hygroscopic nonlinear optical crystals. The amorphous layer consists of one or more alkali metal borates and/or alkali earth metal borates. The amorphous layer slows or prevents water and/or oxygen from diffusing into the hygroscopic nonlinear optical crystal, thus simplifying handling, storage and operating environmental requirements. One or multiple additional coating layers may be placed on top of the amorphous layer, with the additional coating layers including conventional optical materials. The thicknesses of the amorphous layer and/or additional layers may be chosen to reduce reflectance of the optical component at one or more specific wavelengths. The coated nonlinear optical crystal is used in an illumination source utilized in a semiconductor inspection system, a metrology system, or a lithography system.
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公开(公告)号：US12015046B2
公开(公告)日：2024-06-18
申请号：US17544413
申请日：2021-12-07
申请人： KLA Corporation
IPC分类号： H01L27/146 , G03F7/00
CPC分类号： H01L27/14698 , G03F7/70033 , H01L27/1464
摘要： Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.
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公开(公告)号：US11715615B2
公开(公告)日：2023-08-01
申请号：US17858943
申请日：2022-07-06
申请人： KLA Corporation
发明人： Edgardo Garcia Berrios , J. Joseph Armstrong , Yinying Xiao-Li , John Fielden , Yung-Ho Alex Chuang
IPC分类号： H01J1/304 , H01J3/02 , H01J37/073 , H01J35/06 , H01J37/28 , H01J37/317
CPC分类号： H01J1/3044 , H01J3/022 , H01J37/073 , H01J35/065 , H01J37/28 , H01J37/3174
摘要： A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.
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公开(公告)号：US20220268710A1
公开(公告)日：2022-08-25
申请号：US17672832
申请日：2022-02-16
申请人： KLA Corporation
摘要： An inspection system may include an illumination source to generate an illumination beam, illumination optics to direct the illumination beam to a sample at an off-axis angle along an illumination direction, and collection optics to collect scattered light from the sample in a dark-field mode, where the scattered light from the sample includes surface haze associated with light scattered from a surface of the sample, and where at least a at least a portion of the surface haze has elliptical polarizations. The system may further include pupil-plane optics to convert the polarizations of the surface haze across the pupil to linear polarization that is aligned parallel to a selected haze orientation direction. The system may include a linear polarizer to reject the surface haze aligned parallel to this haze orientation direction and a detector to generate a dark-field image of the sample based on light passed by the linear polarizer.
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公开(公告)号：US20210272791A1
公开(公告)日：2021-09-02
申请号：US17322651
申请日：2021-05-17
申请人： KLA Corporation
IPC分类号： H01J61/067 , G01N21/88 , H01J61/10
摘要： A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.
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公开(公告)号：US11424117B2
公开(公告)日：2022-08-23
申请号：US17322651
申请日：2021-05-17
申请人： KLA Corporation
IPC分类号： H01J61/067 , G01N21/88 , H01J61/10 , G01N21/95
摘要： A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.
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公开(公告)号：US20220136981A1
公开(公告)日：2022-05-05
申请号：US17576528
申请日：2022-01-14
申请人： KLA Corporation
摘要： Strontium tetraborate can be used as an optical material. Strontium tetraborate exhibits high refractive indices, high optical damage threshold, and high microhardness. The transmission window of strontium tetraborate covers a very broad range of wavelengths, from 130 nm to 3200 nm, making the material particularly useful at VUV wavelengths. An optical component made of strontium tetraborate can be incorporated in an optical system, such as a semiconductor inspection system, a metrology system, or a lithography system. These optical components may include mirrors, lenses, lens arrays, prisms, beam splitters, windows, lamp cells or Brewster-angle optics.
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8.发明申请公开(公告)号：US20210239629A1
公开(公告)日：2021-08-05
申请号：US17160006
申请日：2021-01-27
申请人： KLA Corporation
发明人： Yung-Ho Alex Chuang , John Fielden
IPC分类号： G01N23/20008 , G01N23/207 , G01N23/201 , G03F7/20
摘要： Methods and systems for realizing a high radiance x-ray source based on a high density electron emitter array are presented herein. The high radiance x-ray source is suitable for high throughput x-ray metrology and inspection in a semiconductor fabrication environment. The high radiance X-ray source includes an array of electron emitters that generate a large electron current focused over a small anode area to generate high radiance X-ray illumination light. In some embodiments, electron current density across the surface of the electron emitter array is at least 0.01 Amperes/mm2, the electron current is focused onto an anode area with a dimension of maximum extent less than 100 micrometers, and the spacing between emitters is less than 5 micrometers. In another aspect, emitted electrons are accelerated from the array to the anode with a landing energy less than four times the energy of a desired X-ray emission line.
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公开(公告)号：US20210164917A1
公开(公告)日：2021-06-03
申请号：US17107539
申请日：2020-11-30
申请人： KLA Corporation
IPC分类号： G01N21/95 , H01L27/146
摘要： An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on a first surface of the semiconductor membrane, and a boron-coated, textured surface on a second surface of the semiconductor membrane. The textured surface comprises pseudo-random, periodic, and/or random distribution of upright pyramids, inverted pyramids, and/or nanocones. The textured surface reduces the reflection of incident light across wide bands in the DUV and VUV regimes, thus increasing the amount of light absorbed and improving the efficiency of the image sensor. Reflectance may be further reduced by applying an antireflective coating on the textured surface. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. and incorporated in an inspection system.
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公开(公告)号：US20210098222A1
公开(公告)日：2021-04-01
申请号：US17020277
申请日：2020-09-14
申请人： KLA Corporation
发明人： Edgardo Garcia Berrios , J. Joseph Armstrong , Yinying Xiao-Li , John Fielden , Yung-Ho Alex Chuang
IPC分类号： H01J1/304 , H01J37/073 , H01J3/02 , H01J37/317 , H01J37/28 , H01J35/06
摘要： A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.
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