-
公开(公告)号：US11114491B2
公开(公告)日：2021-09-07
申请号：US16562396
申请日：2019-09-05
申请人： KLA Corporation
发明人： Yung-Ho Alex Chuang , Jehn-Huar Chern , John Fielden , Jingjing Zhang , David L. Brown , Sisir Yalamanchili
IPC分类号： H01L27/146 , H01L27/148
摘要： An image sensor utilizes a pure boron layer and a second epitaxial layer having a p-type dopant concentration gradient to enhance sensing DUV, VUV or EUV radiation. Sensing (circuit) elements and associated metal interconnects are fabricated on an upper surface of a first epitaxial layer, then the second epitaxial layer is formed on a lower surface of the first epitaxial layer, and then a pure boron layer is formed on the second epitaxial layer. The p-type dopant concentration gradient is generated by systematically increasing a concentration of p-type dopant in the gas used during deposition/growth of the second epitaxial layer such that a lowest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with the first epitaxial layer, and such that a highest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with pure boron layer.
-
公开(公告)号：US20210164917A1
公开(公告)日：2021-06-03
申请号：US17107539
申请日：2020-11-30
申请人： KLA Corporation
IPC分类号： G01N21/95 , H01L27/146
摘要： An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on a first surface of the semiconductor membrane, and a boron-coated, textured surface on a second surface of the semiconductor membrane. The textured surface comprises pseudo-random, periodic, and/or random distribution of upright pyramids, inverted pyramids, and/or nanocones. The textured surface reduces the reflection of incident light across wide bands in the DUV and VUV regimes, thus increasing the amount of light absorbed and improving the efficiency of the image sensor. Reflectance may be further reduced by applying an antireflective coating on the textured surface. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. and incorporated in an inspection system.
-
3.发明公开公开(公告)号：US20240243143A1
公开(公告)日：2024-07-18
申请号：US18391595
申请日：2023-12-20
申请人： KLA Corporation
发明人： Evgeniia Butaeva , Sisir Yalamanchili , Larissa Juschkin , John Fielden , Ting Fung Chung , Francisco Kole
IPC分类号： H01L27/146 , G01N21/95
CPC分类号： H01L27/1462 , G01N21/9501 , H01L27/14636 , H01L27/1464 , H01L27/14685 , G02B1/11
摘要： Back-illuminated image sensors for detecting short wavelength radiation (e.g., deep ultraviolet (DUV) and vacuum ultraviolet (VUV) light) include a semiconductor membrane, circuit elements formed on a frontside surface of the semiconductor membrane, and a pure boron coating on the backside surface of the semiconductor membrane. A two-part anti-reflective coating is formed over the pure boron coating and includes a thin oxide or nitride protection layer disposed between the pure boron coating and a fluoride-based anti-reflection layer. A method for fabricating the image sensors may include performing plasma atomic layer deposition (plasma ALD) processes to sequentially generate the pure boron coating, the oxide/nitride protection layer and then the fluoride-based anti-reflection layer. The image sensors may be configured as charge coupled devices (CCDs), complementary metal oxide semiconductor (CMOS) sensors, or as photodiodes, and arranged as two-dimensional (2D) area sensors or a one-dimensional (1D) array sensors.
-
公开(公告)号：US12015046B2
公开(公告)日：2024-06-18
申请号：US17544413
申请日：2021-12-07
申请人： KLA Corporation
IPC分类号： H01L27/146 , G03F7/00
CPC分类号： H01L27/14698 , G03F7/70033 , H01L27/1464
摘要： Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.
-
5.发明公开公开(公告)号：US20240063248A1
公开(公告)日：2024-02-22
申请号：US18502059
申请日：2023-11-05
申请人： KLA Corporation
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14687 , H01L27/1464 , H01L27/14806
摘要： An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.
-
6.发明公开公开(公告)号：US20240313032A1
公开(公告)日：2024-09-19
申请号：US18671172
申请日：2024-05-22
申请人： KLA Corporation
IPC分类号： H01L27/146 , G03F7/00
CPC分类号： H01L27/14698 , G03F7/70033 , H01L27/1464
摘要： Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.
-
7.发明授权公开(公告)号：US11848350B2
公开(公告)日：2023-12-19
申请号：US17197292
申请日：2021-03-10
申请人： KLA Corporation
IPC分类号： H01L27/14 , H01L27/146 , H01L27/148
CPC分类号： H01L27/14687 , H01L27/1464 , H01L27/14806
摘要： An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.
-
公开(公告)号：US20220254829A1
公开(公告)日：2022-08-11
申请号：US17544413
申请日：2021-12-07
申请人： KLA Corporation
IPC分类号： H01L27/146 , G03F7/20
摘要： Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.
-
9.发明申请公开(公告)号：US20210320144A1
公开(公告)日：2021-10-14
申请号：US17197292
申请日：2021-03-10
申请人： KLA Corporation
IPC分类号： H01L27/146 , H01L27/148
摘要： An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.013 秒)
