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公开(公告)号：US20240385111A1
公开(公告)日：2024-11-21
申请号：US18787119
申请日：2024-07-29
Inventor： Chien-Cheng Chen , Ping-Hsun Lin , Huan-Ling Lee , Ta-Cheng Lien , Chia-Jen Chen , Hsin-Chang Lee
Abstract: A mask characterization method comprises measuring an interference signal of a reflection or transmission mask for use in lithography; and determining a quality metric for the reflection or transmission mask based on the interference signal. A mask characterization apparatus comprises a light source arranged to illuminate a reflective or transmissive mask with light whereby mask-reflected or mask-transmitted light is generated; an optical grating arranged to convert the mask-reflected or mask-transmitted light into an interference pattern; and an optical detector array arranged to generate an interference signal by measuring the interference pattern.
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公开(公告)号：US11899357B2
公开(公告)日：2024-02-13
申请号：US17321852
申请日：2021-05-17
Inventor： Chien-Cheng Chen , Huan-Ling Lee , Ta-Cheng Lien , Chia-Jen Chen , Hsin-Chang Lee
IPC: G03F1/32
CPC classification number: G03F1/32
Abstract: A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.
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公开(公告)号：US20190267374A1
公开(公告)日：2019-08-29
申请号：US16407730
申请日：2019-05-09
Inventor： Chih-Chang Hung , Chia-Jen Chen , Ming-Ching Chang , Shu-Yuan Ku , Yi-Hsuan Hsiao , I-Wei Yang
IPC: H01L27/088 , H01L29/08 , H01L29/66 , H01L29/423 , H01L29/06 , H01L21/8234 , H01L21/3213 , H01L21/311 , H01L29/49 , H01L21/762
Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.
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公开(公告)号：US10295899B2
公开(公告)日：2019-05-21
申请号：US15626643
申请日：2017-06-19
Inventor： Hsin-Chang Lee , Chia-Jen Chen , Chih-Cheng Lin , Ping-Hsun Lin
IPC: G03F1/22 , G03F1/44 , G03F1/54 , G03F1/72 , G03F1/76 , G03F1/78 , G03F1/84 , G03F7/20 , H01L21/027
Abstract: A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.
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公开(公告)号：US09244341B2
公开(公告)日：2016-01-26
申请号：US14630487
申请日：2015-02-24
Inventor： Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Anthony Yen
CPC classification number: G03F1/76 , G03F1/24 , G03F1/38 , G03F1/44 , G03F1/50 , G03F1/68 , G03F1/70 , G06F17/5068
Abstract: A photomask having a machine-readable identifying mark and suitable for manufacturing integrated circuit devices and a method for forming the photomask and identifying mark are disclosed. An exemplary embodiment includes receiving a design layout corresponding to a pattern to be formed on a photomask blank. A specification of an identifying code is also received along with the photomask blank, which includes a substrate, a reflective layer, and an absorptive layer. A first patterning is performed using the design layout. A second patterning is performed using the specification of the identifying code.
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Patent Agency Ranking
公开(公告)号：US20150205194A1
公开(公告)日：2015-07-23
申请号：US14158068
申请日：2014-01-17
Inventor： Yun-Yue LIN , Hsin-Chang Lee , Chia-Jen Chen , Anthony Yen
IPC: G03F1/48
CPC classification number: G03F1/48
Abstract: The present disclosure provides a lithography mask comprising a substrate, a reflective multiplayer (ML) on the substrate, a barrier layer on the reflective ML, and an absorber layer over the barrier layer. In some embodiments, a thickness of the barrier layer is less than or equal to about 10 nm. In some embodiments, a portion of the absorber layer and a portion of the barrier layer are removed. The present disclosure also provides a method for fabricating a lithography mask, and a method for patterning a substrate using a lithography mask.
Abstract translation: 本公开提供了一种光刻掩模，其包括衬底，衬底上的反射多人（ML），反射ML上的阻挡层，以及阻挡层上的吸收层。 在一些实施例中，阻挡层的厚度小于或等于约10nm。 在一些实施例中，吸收层的一部分和阻挡层的一部分被去除。 本公开还提供了一种用于制造光刻掩模的方法，以及使用光刻掩模图案化衬底的方法。
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公开(公告)号：US09057961B2
公开(公告)日：2015-06-16
申请号：US14336231
申请日：2014-07-21
Inventor： Chih-Chiang Tu , Hsin-Chang Lee , Jong-Yuh Chang , Chia-Jen Chen , Chun-Lang Chen
Abstract: Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate MoxSiyONz material which can prevent damages to the quartz substrate when the process goes through etching steps three times. The island mask is defined on the mask blank by using various optical proximity correction rules.
Abstract translation: 公开了掩模毛坯和掩模的结构，以及制造掩模的方法。 当过程经过蚀刻步骤三次时，新的掩模坯料和掩模包括三层蚀刻停止层，以防止损坏石英基板。 三重蚀刻停止层可以包括含有氮（TaN）的钽的第一子层，含有氧（TaO）的钽的第二子层和TaN的第三子层。 或者，三重蚀刻停止层可以包括SiON材料的第一子层，TaO材料的第二子层和SiON材料的第三子层。 另一个替代方案可以是一层低蚀刻速率的MoxSiyONz材料，当该工艺经过蚀刻步骤三次时，其可以防止对石英衬底的损坏。 通过使用各种光学邻近校正规则在掩模空白上定义岛掩模。
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公开(公告)号：US12147154B2
公开(公告)日：2024-11-19
申请号：US18130262
申请日：2023-04-03
Inventor： Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Ta-Cheng Lien
Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.
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9.发明授权公开(公告)号：US11860532B2
公开(公告)日：2024-01-02
申请号：US17815041
申请日：2022-07-26
Inventor： Hsin-Chang Lee , Ping-Hsun Lin , Chih-Cheng Lin , Chia-Jen Chen
IPC: G03F1/44 , G03F1/84 , G03F1/42 , G03F1/54 , G03F1/72 , G03F1/76 , G03F7/20 , G03F1/22 , H01L21/027 , G03F1/78
CPC classification number: G03F1/44 , G03F1/42 , G03F1/84 , G03F1/22 , G03F1/54 , G03F1/72 , G03F1/76 , G03F1/78 , G03F7/2004 , H01L21/0274
Abstract: A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.
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公开(公告)号：US11740547B2
公开(公告)日：2023-08-29
申请号：US17244662
申请日：2021-04-29
Inventor： Wen-Chang Hsueh , Huan-Ling Lee , Chia-Jen Chen , Hsin-Chang Lee
Abstract: A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.
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