公开(公告)号：US11947261B2

公开(公告)日：2024-04-02

申请号：US17150220

申请日：2021-01-15

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： Mo Chen ,  Qun-Qing Li ,  Li-Hui Zhang ,  Yuan-Hao Jin ,  Dong An ,  Shou-Shan Fan

IPC分类号： G03F1/50 ,  G03F1/00 ,  G03F1/48 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/20 ,  G03F1/00 ,  G03F1/48 ,  G03F1/50 ,  G03F7/30

摘要： A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.

公开(公告)号：US11934091B1

公开(公告)日：2024-03-19

申请号：US18263105

申请日：2022-03-31

申请人： TECHNOLOGIES DIGITHO INC.

发明人： Richard Beaudry

IPC分类号： G03F1/00 ,  G03F7/00

CPC分类号： G03F1/00 ,  G03F7/70291 ,  G03F7/70991

摘要： A photolithography mask (10) is provided, said photolithography mask (10) including a plate (15) or an empty frame matrix, a surface of the plate (15) or empty frame matrix including an array of micro-pixels (20), wherein each micro-pixel (20) is independently controllable using an on-board micro-controller (25) in such a manner that a pattern can be generated with the array of micro-pixels (20).

公开(公告)号：US11914288B2

公开(公告)日：2024-02-27

申请号：US17406654

申请日：2021-08-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yu-Yu Chen ,  Chi-Hung Liao

IPC分类号： G03F1/76 ,  G03F1/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  H01L21/308

CPC分类号： G03F1/76 ,  G03F1/00 ,  G03F7/162 ,  G03F7/20 ,  G03F7/30 ,  H01L21/0274 ,  H01L21/3086

摘要： A method includes forming a photoresist layer over a wafer. The photoresist layer is exposed to a pattern of radiation using a photomask. The photoresist layer is developed after the photoresist layer is exposed to the pattern of radiation. The photomask includes a substrate and at least one opaque main feature. The substrate has a recessed region recessed from a first surface of the substrate and has a first width. The at least one opaque main feature protrudes from the first surface of the substrate and has a second width greater than the first width of the recessed region of the substrate. A height of the at least one opaque main feature is greater than a depth of the recess region of the substrate.

公开(公告)号：US11626286B1

公开(公告)日：2023-04-11

申请号：US17002605

申请日：2020-08-25

申请人： Rockwell Collins, Inc.

发明人： Jenny Calubayan ,  Richard Korneisel ,  Nathaniel P. Wyckoff ,  Brandon C. Hamilton ,  Kyle B. Snyder

IPC分类号： G03F7/00 ,  G03F7/22 ,  H01L21/02 ,  G03F1/00 ,  G03F9/00 ,  G03F7/20 ,  H01L21/027

摘要： Systems and methods for custom photolithography masking via a precision dispense apparatus and process are disclosed. Methods include creating a toolpath instruction for depositing opaque onto a substrate, programming a precision dispense apparatus to execute the created toolpath instruction, and causing the precision dispense tool to deposit opaque material onto the substrate to form the photomask. The substrate may be an optically transparent plate or film or may be an electronic substrate where the opaque material is deposited directly onto a photoresist coating. Capabilities of the systems and methods disclosed herein extend to 3D substrates and custom photolithography masking, among others.

公开(公告)号：US20220100082A1

公开(公告)日：2022-03-31

申请号：US17546227

申请日：2021-12-09

申请人： TOPPAN INC.

发明人： Akihito OKUMURA ,  Hiroaki MIYAJI ,  Takehiro YAMADA

IPC分类号： G03F1/70 ,  G03F7/20 ,  G03F1/00 ,  G02F1/1335 ,  G03F1/76 ,  G03F7/00

摘要： A photomask is used for scanning type projection exposure provided with a projection lens assembly composed of a lens assembly. A line width in a plurality of patterns of the photomask in a region to be transferred by performing scanning exposure including connecting portions of the lens assembly are corrected with respect to a line width of patterns which are the same as the patterns of the photomask present in a region to be transferred by performing scanning exposure but do not include the connecting portions.

公开(公告)号：US11133187B2

公开(公告)日：2021-09-28

申请号：US16046069

申请日：2018-07-26

申请人： Winbond Electronics Corp.

发明人： Chun-Hung Lin ,  Ching-Chun Huang ,  Chung-Chen Hsu

IPC分类号： G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  H01L21/266 ,  G03F1/00

摘要： A method for forming a photo-mask includes providing a first pattern, wherein the first pattern includes a first light-transmitting region and a first light-shielding region; transforming the first pattern into a second pattern, wherein the second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region, and the second light-transmitting region has an area which is smaller than that of the first light-transmitting region, the second light-shielding region includes the entire region of the first light-shielding region, and the second light-shielding region has an area which is greater than that of the first light-shielding region; and forming the second pattern on a photo-mask substrate to form a photo-mask, wherein the photo-mask is used in an ion implantation process of a material layer.

公开(公告)号：US10915689B2

公开(公告)日：2021-02-09

申请号：US15769338

申请日：2016-09-28

申请人： ASML NETHERLANDS B.V.

发明人： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Bernardo Kastrup ,  Michael Kubis ,  Johannes Catharinus Hubertus Mulkens ,  David Frans Simon Deckers ,  Wolfgang Helmut Henke ,  Joungchel Lee

IPC分类号： G06F17/50 ,  G03F1/00 ,  G06F30/398 ,  G03F7/20 ,  G03F1/72 ,  G06F119/22 ,  G06F119/18 ,  G03B27/68

摘要： A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US10915090B2

公开(公告)日：2021-02-09

申请号：US16889514

申请日：2020-06-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Danping Peng ,  Junjiang Lei ,  Daniel Beylkin ,  Kenneth Lik Kin Ho ,  Sagar Trivedi ,  Fangbo Xu

IPC分类号： G06F30/392 ,  G06F30/30 ,  G06F30/33 ,  G03F1/00 ,  G05B19/4097 ,  G03F1/70 ,  G03F1/36 ,  G03F1/24 ,  G06F111/20 ,  G06F119/18

摘要： Examples of synchronized parallel tile computation techniques for large area lithography simulation are disclosed herein for solving tile boundary issues. An exemplary method for integrated circuit (IC) fabrication comprises receiving an IC design layout, partitioning the IC design layout into a plurality of tiles, performing a simulated imaging process on the plurality of tiles, generating a modified IC design layout by combining final synchronized image values from the plurality of tiles, and providing the modified IC design layout for fabricating a mask. Performing the simulated imaging process comprises executing a plurality of imaging steps on each of the plurality of tiles. Executing each of the plurality of imaging steps comprises synchronizing image values from the plurality of tiles via data exchange between neighboring tiles.

公开(公告)号：US20200341366A1

公开(公告)日：2020-10-29

申请号：US16765339

申请日：2018-11-27

申请人： ASML NETHERLANDS B.V. ,  ASML HOLDING N.V

发明人： Derk Servatius Gertruda BROUNS ,  Joshua ADAMS ,  Aage BENDIKSEN ,  Richard JACOBS ,  Andrew JUDGE ,  Veera Venkata Narasimha Narendra Phani KOTTAPALLI ,  Joseph Harry LYONS ,  Theodorus Marinus MODDERMAN ,  Manish RANJAN ,  Marcus Adrianus VAN DE KERKHOF ,  Xugang XIONG

IPC分类号： G03F1/64 ,  G03F1/00 ,  G03F7/20

摘要： An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

公开(公告)号：US10802392B2

公开(公告)日：2020-10-13

申请号：US16510855

申请日：2019-07-12

申请人： Applied Materials, Inc.

发明人： Banqiu Wu ,  Eli Dagan

IPC分类号： G03F1/00 ,  G03F1/54 ,  G03F1/46 ,  G03F1/80

摘要： Embodiments described herein relate to apparatus and methods for removing one or more films from a photomask to create a black border and one or more pellicle anchor areas thereon. A photomask substrate is exposed by removing the one or more films in the black border and pellicle anchor areas. The black border prevents a pattern on the photomask from overlapping a pattern on a substrate being processed. To create the black border and pellicle anchor areas, a laser beam is projected through a lens and focused on a surface of the films. The films are ablated by the laser beam without damaging the photomask substrate.