公开(公告)号：US10996573B2

公开(公告)日：2021-05-04

申请号：US16474692

申请日：2017-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  David Frans Simon Deckers ,  Peter Hanzen Wardenier

IPC: G03B27/42 ,  G03F7/20 ,  G03F1/70 ,  G03F1/74

Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.

公开(公告)号：US11054813B2

公开(公告)日：2021-07-06

申请号：US15763834

申请日：2016-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  David Frans Simon Deckers ,  Franciscus Godefridus Casper Bijnen ,  Richard Johannes Franciscus Van Haren ,  Weitian Kou

IPC: G05B19/418 ,  G03F7/20 ,  G03F9/00

Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.

公开(公告)号：US11754931B2

公开(公告)日：2023-09-12

申请号：US17603870

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy Werkman ,  David Frans Simon Deckers ,  Simon Philip Spencer Hastings ,  Jeffrey Thomas Ziebarth ,  Samee Ur Rehman ,  Davit Harutyunyan ,  Chenxi Lin ,  Yana Cheng

IPC: G03F1/36 ,  G03F7/00

CPC classification number: G03F7/705 ,  G03F1/36 ,  G03F7/70508 ,  G03F7/70616

Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.

公开(公告)号：US11592753B2

公开(公告)日：2023-02-28

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11782349B2

公开(公告)日：2023-10-10

申请号：US18100662

申请日：2023-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70508 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11327407B2

公开(公告)日：2022-05-10

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US10915689B2

公开(公告)日：2021-02-09

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Bernardo Kastrup ,  Michael Kubis ,  Johannes Catharinus Hubertus Mulkens ,  David Frans Simon Deckers ,  Wolfgang Helmut Henke ,  Joungchel Lee

IPC: G06F17/50 ,  G03F1/00 ,  G06F30/398 ,  G03F7/20 ,  G03F1/72 ,  G06F119/22 ,  G06F119/18 ,  G03B27/68

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US10191390B2

公开(公告)日：2019-01-29

申请号：US15578312

申请日：2016-06-27

Applicant: ASML Netherlands B.V.

Inventor： Paul Cornelis Hubertus Aben ,  Sanjaysingh Lalbahadoersing ,  Jurgen Johannes Henderikus Maria Schoonus ,  David Frans Simon Deckers

IPC: G03F7/20 ,  G03F9/00

Abstract: A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.