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公开(公告)号：US10859930B2
公开(公告)日：2020-12-08
申请号：US16665022
申请日：2019-10-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Jasper Menger , Paul Cornelis Hubertus Aben , Everhardus Cornelis Mos
IPC: G03F9/00
Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.
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2.发明申请公开(公告)号：US20200057395A1
公开(公告)日：2020-02-20
申请号：US16665022
申请日：2019-10-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Jasper MENGER , Paul Cornelis Hubertus Aben , Everhardus Cornelis Mos
IPC: G03F9/00
Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.
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公开(公告)号：US10191390B2
公开(公告)日：2019-01-29
申请号：US15578312
申请日：2016-06-27
Applicant: ASML Netherlands B.V.
Inventor： Paul Cornelis Hubertus Aben , Sanjaysingh Lalbahadoersing , Jurgen Johannes Henderikus Maria Schoonus , David Frans Simon Deckers
Abstract: A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.
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Patent Agency Ranking
公开(公告)号：US20140089870A1
公开(公告)日：2014-03-27
申请号：US13963947
申请日：2013-08-09
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis MOS , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Nicole Schoumans , Michael Kubis , Paul Cornelis Hubertus Aben
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/36 , G03F7/70458 , G03F7/70525 , G03F7/70633
Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.
Abstract translation: 一种计算光刻工具的处理校正的方法及相关装置。 该方法包括测量使用光刻工具预先暴露的衬底上的工艺缺陷数据; 将过程签名模型拟合到所测量的过程缺陷数据，以获得用于光刻工具的过程签名的模型; 并使用过程签名模型来计算光刻工具的过程校正。
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公开(公告)号：USRE49460E1
公开(公告)日：2023-03-14
申请号：US14637358
申请日：2015-03-03
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis Mos , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Nicole Schoumans , Michael Kubis , Paul Cornelis Hubertus Aben
IPC: G06F30/398 , G03F1/36 , G03F7/20
Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.
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公开(公告)号：USRE49199E1
公开(公告)日：2022-09-06
申请号：US14629351
申请日：2015-02-23
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis Mos , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Nicole Schoumans , Michael Kubis , Paul Cornelis Hubertus Aben
IPC: G06F30/398 , G03F1/36 , G03F7/20
Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.
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公开(公告)号：US11300891B2
公开(公告)日：2022-04-12
申请号：US17111050
申请日：2020-12-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Jasper Menger , Paul Cornelis Hubertus Aben , Everhardus Cornelis Mos
IPC: G03F9/00
Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.
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公开(公告)号：US08887107B2
公开(公告)日：2014-11-11
申请号：US13963947
申请日：2013-08-09
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis Mos , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Nicole Schoumans , Michael Kubis , Paul Cornelis Hubertus Aben
CPC classification number: G06F17/5081 , G03F1/36 , G03F7/70458 , G03F7/70525 , G03F7/70633
Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.
Abstract translation: 一种计算光刻工具的处理校正的方法及相关装置。 该方法包括测量使用光刻工具预先暴露的衬底上的工艺缺陷数据; 将过程签名模型拟合到所测量的过程缺陷数据，以获得用于光刻工具的过程签名的模型; 并使用过程签名模型来计算光刻工具的过程校正。
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