公开(公告)号：US20160033872A1

公开(公告)日：2016-02-04

申请号：US14880018

申请日：2015-10-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu Cao

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70125 ,  G03F7/70458 ,  G03F7/70516 ,  G03F7/70525

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

Abstract translation: 一种基于模型的调谐方法，用于利用参考光刻系统调整第一光刻系统，每个参考光刻系统具有用于控制成像性能的可调参数。 该方法包括定义测试图案和成像模型的步骤; 使用参考光刻系统成像测试图案并测量成像结果; 使用第一光刻系统成像测试图案并测量成像结果; 使用对应于参考光刻系统的成像结果校准成像模型，其中校准的成像模型具有第一组参数值; 使用对应于第一光刻系统的成像结果来调整校准的成像模型，其中调谐的校准模型具有第二组参数值; 以及基于第一组参数值和第二组参数值之间的差异来调整第一光刻系统的参数。

公开(公告)号：US20150092169A1

公开(公告)日：2015-04-02

申请号：US14494050

申请日：2014-09-23

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tsutomu Takenaka ,  Kazuhiko Mishima

IPC: G03F7/20

CPC classification number: G03F7/70358 ,  G03F7/70191 ,  G03F7/70458 ,  G03F7/70525

Abstract: An exposure apparatus comprises a controller configured to control scanning of an original holding unit and a substrate holding unit so as to expose a first pattern forming area onto a second pattern forming area exposed in advance on the substrate via a second projection optical system having a second projection magnification differing from a first projection magnification with the first pattern forming area superimposed on the second pattern forming areas. In particular, the controller changes the operation of the original holding unit or the substrate holding unit among the plurality of second pattern forming areas based on the state of the second pattern forming areas or the state of the patterns formed on the original while the first pattern forming areas are scanning-exposed onto the plurality of second pattern forming areas in a single scanning between the original holding unit and the substrate holding unit.

Abstract translation: 曝光装置包括：控制器，被配置为控制原稿保持单元和基板保持单元的扫描，以便经由具有第二图案形成区域的第二投影光学系统将第一图案形成区域暴露于预先暴露在基板上的第二图案形成区域上 与第一图案形成区域叠加在第二图案形成区域上的投影倍率不同于第一投影倍率。 特别地，控制器基于第二图案形成区域的状态或在原稿上形成的图案的状态来改变原始保持单元或基板保持单元在多个第二图案形成区域中的操作，而第一图案 在原始保持单元和基板保持单元之间的单次扫描中，在多个第二图案形成区域上对成膜区域进行扫描曝光。

公开(公告)号：US20150045935A1

公开(公告)日：2015-02-12

申请号：US14525704

申请日：2014-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Wenjin SHAO ,  Ronaldus Johannes Gijsbertus GOOSSENS ,  Jun YE ,  James Patrick KOONMEN

IPC: B29C67/00

CPC classification number: B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

Abstract translation: 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。

公开(公告)号：US20150015859A1

公开(公告)日：2015-01-15

申请号：US14141147

申请日：2013-12-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sanghyun Yun ,  Cha-Dong Kim ,  Changhoon Kim ,  Jung-In Park ,  Kibeom Lee ,  Hikuk Lee ,  Jaehyuk Chang

IPC: G03F7/20

CPC classification number: G03F7/70291 ,  G03F7/2051 ,  G03F7/70208 ,  G03F7/70275 ,  G03F7/70458

Abstract: Provided is a digital exposure device. The digital exposure device includes a stage mounted with a substrate on which a pattern is formed, a first light source, a first head, and a digital micro-mirror device control unit. The stage is configured to move in a scan direction. The first light source is configured to provide a first light. The first head is spaced apart from the stage in a first direction and is configured to receive the first light, to generate at least one spot beam by modulating the first light, and to project the at least one spot beam onto the substrate. The digital micro-mirror device control unit is configured to control an energy of the at least one spot beam generated from the first head to be inversely proportional to a size of the at least spot beam generated from the first head.

Abstract translation: 提供了一种数字曝光装置。 数字曝光装置包括安装有其上形成有图案的基板的台，第一光源，第一头和数字微镜装置控制单元。 舞台被配置为沿扫描方向移动。 第一光源被配置为提供第一光。 第一头部在第一方向上与舞台间隔开，并且被配置为接收第一光，通过调制第一光以产生至少一个点光束，并将至少一个光束投射到衬底上。 数字微镜装置控制单元被配置为控制从第一头产生的至少一个点束的能量与从第一头产生的至少点光束的尺寸成反比。

公开(公告)号：US08806387B2

公开(公告)日：2014-08-12

申请号：US12475095

申请日：2009-05-29

Applicant: Yu Cao ,  Wenjin Shao ,  Ronaldus Johannes Gijsbertus Goossens ,  Jun Ye ,  James Patrick Koonmen

Inventor： Yu Cao ,  Wenjin Shao ,  Ronaldus Johannes Gijsbertus Goossens ,  Jun Ye ,  James Patrick Koonmen

IPC: G06F17/50

CPC classification number: B29C67/0088 ,  B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.

Abstract translation: 描述了过程仿真的系统和方法。 这些方法可以使用标识参考扫描仪对一组可调谐参数的灵敏度的参考模型。 可以使用参考模型来模拟来自芯片设计的芯片制造，其中芯片设计被表示为一个或多个掩模。 可以使用迭代重调和仿真过程来优化模拟芯片中的关键尺寸，并获得模拟芯片与预期芯片的收敛。 此外，可以向设计者提供一组结果，从中创建更新的芯片设计。

公开(公告)号：US20140205955A1

公开(公告)日：2014-07-24

申请号：US14249371

申请日：2014-04-10

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Chun-Wei Wu

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F1/50 ,  G03F7/203 ,  G03F7/70458 ,  G03F7/70466

Abstract: A method of forming a tight-pitched pattern. A target pattern including a plurality of first stripe patterns is provided. Each of the first stripe patterns has a first width and a first length. A photomask includes a plurality of second stripe patterns corresponding to the first stripe patterns is provided. Each of the second stripe patterns has a second width and a second length. A first exposure process with the photomask is provided in an exposure system. The first exposure process uses a first light source with a higher resolution that is capable of resolving the second width of each of the second stripe patterns. Finally, a second exposure process with the photo-mask is provided in the exposure system. The second exposure process uses a second light source with a lower resolution that is not adequate to resolve the second width of each of the second stripe patterns.

Abstract translation: 形成紧斜图案的方法。 提供包括多个第一条纹图案的目标图案。 每个第一条纹图案具有第一宽度和第一长度。 光掩模包括与第一条纹图案相对应的多个第二条纹。 每个第二条纹图案具有第二宽度和第二长度。 在曝光系统中提供了具有光掩模的第一曝光过程。 第一曝光过程使用具有更高分辨率的第一光源，其能够分辨每个第二条纹图案的第二宽度。 最后，在曝光系统中提供具有光掩模的第二曝光处理。 第二曝光过程使用具有较低分辨率的第二光源，其不足以解决每个第二条纹图案的第二宽度。

公开(公告)号：US20130253681A1

公开(公告)日：2013-09-26

申请号：US13890975

申请日：2013-05-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Yao Hsieh ,  Che-Yu Chiu ,  Anwei Peng ,  Jian-Hung Chen ,  Hsueh-Chen Wu

IPC: G05B19/02

CPC classification number: G05B19/02 ,  G03F7/70458 ,  G05B19/402 ,  G05B19/41885 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/26 ,  Y10S438/975

Abstract: A method for aligning a photolithographic machine in an automated semiconductor manufacturing system is provided. The method may include identifying a maximum precision degree for a wafer and identifying a maximum overlay correction value. The method may simulate one or more algorithms to determine whether an algorithm aligns a leading lot within alignment specifications. The method may align a photolithography machine using an algorithm selected based on the simulations.

Abstract translation: 提供了一种用于在自动半导体制造系统中对准光刻机的方法。 该方法可以包括识别晶片的最大精度度并且识别最大叠加校正值。 该方法可以模拟一种或多种算法来确定算法是否对齐规范中的领先批次。 该方法可以使用基于模拟选择的算法对准光刻机。

公开(公告)号：US08514374B2

公开(公告)日：2013-08-20

申请号：US12611947

申请日：2009-11-04

Applicant: Todd C. Bailey ,  William Chu ,  William Muth

Inventor： Todd C. Bailey ,  William Chu ,  William Muth

IPC: G01B11/00 ,  G03B27/32 ,  G03B27/42

CPC classification number: G03F7/70458 ,  G03F9/7088

Abstract: A method provides improved alignment for a photolithographic exposure. In such method, a first exposure tool and a first chuck used in a reference photolithographic exposure of a first material layer on a substrate can be identified. The substrate typically includes at least a semiconductor layer. The first chuck typically is one of a plurality of chucks usable with the first exposure tool. The method may further include identifying a second exposure tool and a second chuck used in a current photolithographic exposure of a second material layer on the substrate. In one embodiment, alignment correction information specific to each of the identified first exposure tool, the first chuck, the second exposure tool and the second chuck can be used in aligning the semiconductor substrate to a second exposure tool and a second chuck. In one embodiment, such method can compensate for alignment error caused by differences between the first and second exposure tools, between the first and second chucks, or between the first and second exposure tools and between the first and second chucks.

Abstract translation: 一种方法提供了用于光刻曝光的改进的对准。 在这种方法中，可以识别在基板上的第一材料层的参考光刻曝光中使用的第一曝光工具和第一卡盘。 衬底通常包括至少一个半导体层。 第一卡盘通常是可用于第一曝光工具的多个卡盘之一。 该方法还可以包括识别在基板上的第二材料层的当前光刻曝光中使用的第二曝光工具和第二卡盘。 在一个实施例中，可以使用特定于所识别的第一曝光工具，第一卡盘，第二曝光工具和第二卡盘中的每一个的对准校正信息，以将半导体基板对准第二曝光工具和第二卡盘。 在一个实施例中，这种方法可以补偿由第​​一和第二曝光工具之间，第一和第二卡盘之间或第一和第二曝光工具之间以及第一和第二卡盘之间的差异引起的对准误差。

公开(公告)号：US20110267597A1

公开(公告)日：2011-11-03

申请号：US13182416

申请日：2011-07-13

Applicant: Jun Ye ,  Yu Cao

Inventor： Jun Ye ,  Yu Cao

IPC: G03B27/32

CPC classification number: G03F7/705 ,  G03F7/70125 ,  G03F7/70458 ,  G03F7/70516 ,  G03F7/70525

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

Abstract translation: 一种基于模型的调谐方法，用于利用参考光刻系统调整第一光刻系统，每个参考光刻系统具有用于控制成像性能的可调参数。 该方法包括定义测试图案和成像模型的步骤; 使用参考光刻系统成像测试图案并测量成像结果; 使用第一光刻系统成像测试图案并测量成像结果; 使用对应于参考光刻系统的成像结果校准成像模型，其中校准的成像模型具有第一组参数值; 使用对应于第一光刻系统的成像结果来调整校准的成像模型，其中调整的校准模型具有第二组参数值; 以及基于第一组参数值和第二组参数值之间的差异来调整第一光刻系统的参数。

公开(公告)号：US20110102760A1

公开(公告)日：2011-05-05

申请号：US12611947

申请日：2009-11-04

Applicant: Todd C. Bailey ,  William Chu ,  William Muth

Inventor： Todd C. Bailey ,  William Chu ,  William Muth

IPC: G03B27/58 ,  G01B11/00

CPC classification number: G03F7/70458 ,  G03F9/7088

Abstract: A method provides improved alignment for a photolithographic exposure. In such method, a first exposure tool and a first chuck used in a reference photolithographic exposure of a first material layer on a substrate can be identified. The substrate typically includes at least a semiconductor layer. The first chuck typically is one of a plurality of chucks usable with the first exposure tool. The method may further include identifying a second exposure tool and a second chuck used in a current photolithographic exposure of a second material layer on the substrate. In one embodiment, alignment correction information specific to each of the identified first exposure tool, the first chuck, the second exposure tool and the second chuck can be used in aligning the semiconductor substrate to a second exposure tool and a second chuck. In one embodiment, such method can compensate for alignment error caused by differences between the first and second exposure tools, between the first and second chucks, or between the first and second exposure tools and between the first and second chucks.

Abstract translation: 一种方法提供了用于光刻曝光的改进的对准。 在这种方法中，可以识别在基板上的第一材料层的参考光刻曝光中使用的第一曝光工具和第一卡盘。 衬底通常包括至少一个半导体层。 第一卡盘通常是可用于第一曝光工具的多个卡盘之一。 该方法还可以包括识别在基板上的第二材料层的当前光刻曝光中使用的第二曝光工具和第二卡盘。 在一个实施例中，可以使用特定于所识别的第一曝光工具，第一卡盘，第二曝光工具和第二卡盘中的每一个的对准校正信息，以将半导体基板对准第二曝光工具和第二卡盘。 在一个实施例中，这种方法可以补偿由第​​一和第二曝光工具之间，第一和第二卡盘之间或第一和第二曝光工具之间以及第一和第二卡盘之间的差异引起的对准误差。