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公开(公告)号：US10527958B2
公开(公告)日：2020-01-07
申请号：US16132520
申请日：2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US11592753B2
公开(公告)日：2023-02-28
申请号：US17715112
申请日：2022-04-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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3.发明授权公开(公告)号：US11774862B2
公开(公告)日：2023-10-03
申请号：US17501911
申请日：2021-10-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün Cekli , Masashi Ishibashi , Wendy Johanna Martina Van De Ven , Willem Seine Christian Roelofs , Elliott Gerard McNamara , Rizvi Rahman , Michiel Kupers , Emil Peter Schmitt-Weaver , Erik Henri Adriaan Delvigne
IPC: G03F7/20 , G03F7/00 , G01N21/956 , G03F9/00 , H01L21/66
CPC classification number: G03F7/70633 , G01N21/956 , G03F9/7046 , H01L22/12 , H01L22/20
Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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4.发明授权公开(公告)号：US11175591B2
公开(公告)日：2021-11-16
申请号：US16098165
申请日：2017-04-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün Cekli , Masashi Ishibashi , Wendy Johanna Martina Van De Ven , Willem Seine Christian Roelofs , Elliott Gerard McNamara , Rizvi Rahman , Michiel Kupers , Emil Peter Schmitt-Weaver , Erik Henri Adriaan Delvigne
IPC: G03F7/20 , G01N21/956 , G03F9/00 , H01L21/66
Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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Patent Agency Ranking
公开(公告)号：US10962887B2
公开(公告)日：2021-03-30
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US11782349B2
公开(公告)日：2023-10-10
申请号：US18100662
申请日：2023-01-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
CPC classification number: G03F7/70508 , G03F7/705 , G03F7/70633
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US11327407B2
公开(公告)日：2022-05-10
申请号：US17102850
申请日：2020-11-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US11126093B2
公开(公告)日：2021-09-21
申请号：US16099452
申请日：2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Reiner Maria Jungblut , Leon Paul Van Dijk , Willem Seine Christian Roelofs , Wim Tjibbo Tel , Stefan Hunsche , Maurits Van Der Schaar
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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公开(公告)号：US11029610B2
公开(公告)日：2021-06-08
申请号：US16650520
申请日：2018-09-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van T Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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