公开(公告)号：US12197136B2

公开(公告)日：2025-01-14

申请号：US18229984

申请日：2023-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G03F7/00 ,  G03F1/00 ,  G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：US12189302B2

公开(公告)日：2025-01-07

申请号：US17738093

申请日：2022-05-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G03F7/07 ,  G03F7/00 ,  G06F30/20 ,  G06N3/02 ,  G06F119/18 ,  G06F119/22

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US12044979B2

公开(公告)日：2024-07-23

申请号：US18122655

申请日：2023-03-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Yichen Zhang ,  Sarathi Roy

IPC: G03F7/00 ,  G06F17/18 ,  G06F18/24

CPC classification number: G03F7/705 ,  G03F7/70633 ,  G06F17/18 ,  G06F18/24

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

公开(公告)号：US11972922B2

公开(公告)日：2024-04-30

申请号：US18126322

申请日：2023-03-24

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus Dillen ,  Wim Tjibbo Tel ,  Willem Louis Van Mierlo

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

公开(公告)号：US11768442B2

公开(公告)日：2023-09-26

申请号：US17973221

申请日：2022-10-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G03F7/00 ,  G03F1/00 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

CPC classification number: G03F7/70625 ,  G06F30/20 ,  G06T7/0004 ,  H01L22/20 ,  G03F1/00 ,  G06F30/33 ,  G06F30/398 ,  G06F2119/18 ,  G21K5/00 ,  H01L21/00

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

公开(公告)号：US11347150B2

公开(公告)日：2022-05-31

申请号：US17197167

申请日：2021-03-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G03F7/00 ,  G06N3/02 ,  G03F7/20

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US11281110B2

公开(公告)日：2022-03-22

申请号：US16973395

申请日：2019-05-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jeroen Van Dongen ,  Wim Tjibbo Tel ,  Sarathi Roy ,  Yichen Zhang ,  Andrea Cavalli ,  Bart Laurens Sjenitzer ,  Simon Philip Spencer Hastings

IPC: G03F7/20

Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.

公开(公告)号：US20210349395A1

公开(公告)日：2021-11-11

申请号：US17379662

申请日：2021-07-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus Tinnemans ,  Grzegorz Grzela ,  Everhardus Cornelis Mos ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Bart Peter Bert Segers ,  Frank Staals

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US10571806B2

公开(公告)日：2020-02-25

申请号：US16327363

申请日：2017-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Frank Staals ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

公开(公告)号：US11822255B2

公开(公告)日：2023-11-21

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Slachter ,  Stefan Hunsche ,  Wim Tjibbo Tel ,  Anton Bernhard Van Oosten ,  Koenraad Van Ingen Schenau ,  Gijsbert Rispens ,  Brennan Peterson

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70625

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.