公开(公告)号：US20230042759A1

公开(公告)日：2023-02-09

申请号：US17968352

申请日：2022-10-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US11520239B2

公开(公告)日：2022-12-06

申请号：US16075696

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US11579535B2

公开(公告)日：2023-02-14

申请号：US17286020

申请日：2019-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy Anunciado

IPC: G03F7/20

Abstract: A method for determining a contribution of a processing apparatus to a fingerprint of a parameter across a substrate, the method including: obtaining a delta image which relates to a difference between a first pupil image associated with inspection of a first feature on the substrate and a second pupil image associated with inspection of a second feature on the substrate, wherein the first and second features have different dose sensitivities; determining a rate of change of the difference in response to a variation of a dose used to form the first and second features; selecting a plurality of pixels within the delta image having a rate of change above a predetermined threshold; and determining the contribution using the determined rate of change and the delta image restricted to the plurality of pixels.

公开(公告)号：US12197136B2

公开(公告)日：2025-01-14

申请号：US18229984

申请日：2023-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G03F7/00 ,  G03F1/00 ,  G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：US11768442B2

公开(公告)日：2023-09-26

申请号：US17973221

申请日：2022-10-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G03F7/00 ,  G03F1/00 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

CPC classification number: G03F7/70625 ,  G06F30/20 ,  G06T7/0004 ,  H01L22/20 ,  G03F1/00 ,  G06F30/33 ,  G06F30/398 ,  G06F2119/18 ,  G21K5/00 ,  H01L21/00

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

公开(公告)号：US11513442B2

公开(公告)日：2022-11-29

申请号：US16644206

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G03F7/00 ,  G03F1/00 ,  G06T7/00 ,  H01L21/00 ,  G06F30/20 ,  G21K5/00 ,  G03F7/20 ,  H01L21/66 ,  G06F119/18

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

公开(公告)号：US11143971B2

公开(公告)日：2021-10-12

申请号：US16966596

申请日：2019-01-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Marc Jurian Kea ,  Roy Anunciado

IPC: G03B27/00 ,  G03F7/20

Abstract: A method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining an asymmetry of the probability density function, and determining an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.