公开(公告)号：US11822255B2

公开(公告)日：2023-11-21

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Slachter ,  Stefan Hunsche ,  Wim Tjibbo Tel ,  Anton Bernhard Van Oosten ,  Koenraad Van Ingen Schenau ,  Gijsbert Rispens ,  Brennan Peterson

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70625

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US11079687B2

公开(公告)日：2021-08-03

申请号：US16955483

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Slachter ,  Stefan Hunsche ,  Wim Tjibbo Tel ,  Anton Bernhard Van Oosten ,  Koenraad Van Ingen Schenau ,  Gijsbert Rispens ,  Brennan Peterson

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US11087065B2

公开(公告)日：2021-08-10

申请号：US16541420

申请日：2019-08-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Sunit Sondhi Mahajan ,  Abraham Slachter ,  Brennan Peterson ,  Koen Wilhelmus Cornelis Adrianus Van Der Straten ,  Antonio Corradi ,  Pieter Joseph Marie Wöltgens

IPC: G06F30/30 ,  G06F30/398 ,  G03F7/20 ,  G06F30/394 ,  G06F119/08 ,  G06F119/10 ,  G06F119/12 ,  G06F119/22 ,  G06F119/18

Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.

公开(公告)号：US12197136B2

公开(公告)日：2025-01-14

申请号：US18229984

申请日：2023-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G03F7/00 ,  G03F1/00 ,  G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：US11768442B2

公开(公告)日：2023-09-26

申请号：US17973221

申请日：2022-10-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G03F7/00 ,  G03F1/00 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

CPC classification number: G03F7/70625 ,  G06F30/20 ,  G06T7/0004 ,  H01L22/20 ,  G03F1/00 ,  G06F30/33 ,  G06F30/398 ,  G06F2119/18 ,  G21K5/00 ,  H01L21/00

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

公开(公告)号：US12044980B2

公开(公告)日：2024-07-23

申请号：US17296316

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Slachter ,  Wim Tjibbo Tel ,  Daan Maurits Slotboom ,  Vadim Yourievich Timoshkov ,  Koen Wilhelmus Cornelis Adrianus Van Der Straten ,  Boris Menchtchikov ,  Simon Philip Spencer Hastings ,  Cyrus Emil Tabery ,  Maxime Philippe Frederic Genin ,  Youping Zhang ,  Yi Zou ,  Chenxi Lin ,  Yana Cheng

IPC: G05B19/418 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70616 ,  G05B19/4188 ,  G03F7/70525

Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：US11513442B2

公开(公告)日：2022-11-29

申请号：US16644206

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G03F7/00 ,  G03F1/00 ,  G06T7/00 ,  H01L21/00 ,  G06F30/20 ,  G21K5/00 ,  G03F7/20 ,  H01L21/66 ,  G06F119/18

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.