公开(公告)号：US12044980B2

公开(公告)日：2024-07-23

申请号：US17296316

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Slachter ,  Wim Tjibbo Tel ,  Daan Maurits Slotboom ,  Vadim Yourievich Timoshkov ,  Koen Wilhelmus Cornelis Adrianus Van Der Straten ,  Boris Menchtchikov ,  Simon Philip Spencer Hastings ,  Cyrus Emil Tabery ,  Maxime Philippe Frederic Genin ,  Youping Zhang ,  Yi Zou ,  Chenxi Lin ,  Yana Cheng

IPC: G05B19/418 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70616 ,  G05B19/4188 ,  G03F7/70525

Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：US11087065B2

公开(公告)日：2021-08-10

申请号：US16541420

申请日：2019-08-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Sunit Sondhi Mahajan ,  Abraham Slachter ,  Brennan Peterson ,  Koen Wilhelmus Cornelis Adrianus Van Der Straten ,  Antonio Corradi ,  Pieter Joseph Marie Wöltgens

IPC: G06F30/30 ,  G06F30/398 ,  G03F7/20 ,  G06F30/394 ,  G06F119/08 ,  G06F119/10 ,  G06F119/12 ,  G06F119/22 ,  G06F119/18

Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.