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公开(公告)号：US09971251B2
公开(公告)日：2018-05-15
申请号：US14905611
申请日：2014-08-06
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Wolfgang Henke , Thomas Leo Maria Hoogenboom , Pavel Izikson , Paul Frank Luehrmann , Daan Maurits Slotboom , Jens Staecker , Alexander Ypma
CPC classification number: G03F7/70516 , G03F7/70491 , G03F7/70525 , G03F7/70625 , G03F7/70633
Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.
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公开(公告)号：US12189302B2
公开(公告)日：2025-01-07
申请号：US17738093
申请日：2022-05-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
IPC: G03F7/07 , G03F7/00 , G06F30/20 , G06N3/02 , G06F119/18 , G06F119/22
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US11347150B2
公开(公告)日：2022-05-31
申请号：US17197167
申请日：2021-03-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US11022896B2
公开(公告)日：2021-06-01
申请号：US16083076
申请日：2017-02-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter Schmitt-Weaver , Amir Bin Ismail , Kaustuve Bhattacharyya , Paul Derwin
Abstract: Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.
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公开(公告)号：US10884345B2
公开(公告)日：2021-01-05
申请号：US16822870
申请日：2020-03-18
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Jens Stäcker , Koenraad Remi André Maria Schreel , Roy Werkman
Abstract: A first substrate 2002 has a calibration pattern applied to a first plurality of fields 2004 by a lithographic apparatus. Further substrates 2006, 2010 have calibration patterns applied to further pluralities of fields 2008, 2012. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates 2002, 2006, 2010 and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fields 2004, 2008, 2012 in this example) is gathered together in a database 2013 and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.
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Patent Agency Ranking
公开(公告)号：US09715181B2
公开(公告)日：2017-07-25
申请号：US14103486
申请日：2013-12-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter Schmitt-Weaver , Paul Frank Luehrmann , Wolfgang Henke , Marc Jurian Kea
IPC: G03F7/20
CPC classification number: G03F7/70516
Abstract: A lithography tool is calibrated using a calibration substrate having a set of first marks distributed across its surface in a known pattern. The tool is operated to apply a pattern comprising a plurality of second marks at various positions on the substrate, each second mark overlying one of the first marks and being subject to an overlay error dependent on an apparatus-specific deviation. The second marks are applied by multiple exposures while the substrate remains loaded in the tool. An operating parameter of the apparatus is varied between the exposures. An overlay error is measured and used to calculate parameter-specific, apparatus-specific calibration data based on knowledge of the parameter variation used for each exposure.
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公开(公告)号：US11422476B2
公开(公告)日：2022-08-23
申请号：US17061641
申请日：2020-10-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Wim Tjibbo Tel , Frank Staals , Leon Martin Levasier
Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
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公开(公告)号：US11249404B2
公开(公告)日：2022-02-15
申请号：US16619821
申请日：2018-05-18
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Rene Marinus Gerardus Johan Queens , Wolfgang Helmut Henke , Wim Tjibbo Tel , Theodorus Franciscus Adrianus Maria Linschoten
IPC: G03F9/00
Abstract: A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.
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公开(公告)号：US10078273B2
公开(公告)日：2018-09-18
申请号：US15121340
申请日：2014-12-17
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Wolfgang Henke , Christopher Prentice , Frank Staals , Wim Tjibbo Tel
CPC classification number: G03F7/70641 , G03F7/70725 , G03F9/7019 , G03F9/7026 , G03F9/7092
Abstract: A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor and an associated processor for obtaining a height map of the substrate surface prior to applying the pattern. A controller uses the height map to control focusing with respect to the projection system when applying the pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which the measurement signals are used to control the focusing, between the first and second regions. For example, an algorithm to calculate height values from optical measurement signals can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in the focusing.
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公开(公告)号：US12032297B2
公开(公告)日：2024-07-09
申请号：US17291513
申请日：2019-10-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Martin Kers
CPC classification number: G03F7/705 , G05B13/042
Abstract: A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.
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