LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD

    公开(公告)号:US20180231900A1

    公开(公告)日:2018-08-16

    申请号:US15749209

    申请日:2016-07-27

    IPC分类号: G03F9/00 G03F7/20

    摘要: An initialization method including estimating a characteristic of a property of an object based on a plurality of measurements by the sensor of the property using a respective plurality of different measurement parameters, different ones of the measurements using different measurement parameters, the characteristic including a combination of respective outcomes of respective ones of the measurements weighted by a respective weighting coefficient; performing, for each of a plurality of models of the object, each model configured to enable respective simulation of the performing of the measurements, a respective simulation, the respective simulation including simulating the measurements under control of a respective plurality of different simulation parameters to obtain a respective plurality of simulated characteristics of the property, the different simulation parameters being indicative of the different measurement parameters; determining, for each of the models, a respective bias representative of a respective difference between a respective theoretical characteristic of the property in accordance with the respective model and a respective further combination of the simulated characteristics of the property in the respective model, the respective further combination of the simulated characteristics including the weight coefficients, each particular one of the weight coefficients associated with a particular one of the different simulation parameters; using a cost function configured to optimize a correspondence between the simulated characteristic of the property and the theoretical characteristic of the property, the cost function being a function of the respective biases of the models; and optimizing the cost function to derive the weight coefficients from the cost function; and using the weight coefficients and the associated simulation parameters in a controller associated with the sensor.

    LITHOGRAPHIC METHOD AND APPARATUS

    公开(公告)号:US20170160647A1

    公开(公告)日:2017-06-08

    申请号:US15325406

    申请日:2015-06-11

    IPC分类号: G03F7/20

    摘要: A measurement method including using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

    Scanner overlay correction system and method
    10.
    发明授权
    Scanner overlay correction system and method 有权
    扫描仪覆盖校正系统和方法

    公开(公告)号:US09442392B2

    公开(公告)日:2016-09-13

    申请号:US14585457

    申请日:2014-12-30

    摘要: A method of processing first and second semiconductor wafers is provided. Each of the first and second semiconductor wafers has a first layer and a second layer over the first layer. A first lithographic process is performed on the first layer over the first semiconductor wafer using a first inter-field correction and a first intra-field correction. An overlay error of the first lithographic process is determined. A second inter-field correction and a second intra-field correction are computed based on the first inter-field correction, the first intra-field correction, and the measured overlay error. A second lithographic process is performed on the second layer over the second semiconductor wafer, based on the second inter-field correction and the second intra-field correction.

    摘要翻译: 提供了一种处理第一和第二半导体晶片的方法。 第一和第二半导体晶片中的每一个在第一层上具有第一层和第二层。 使用第一场间校正和第一场内校正在第一半导体晶片上的第一层上执行第一光刻处理。 确定第一光刻工艺的覆盖误差。 基于第一场间校正,第一场校正和测量的重叠误差来计算第二场校正和第二场校正。 基于第二场间校正和第二场内校正,在第二半导体晶片上的第二层上执行第二光刻处理。