公开(公告)号：US20200319563A1

公开(公告)日：2020-10-08

申请号：US16753441

申请日：2018-08-23

申请人： ASML NETHERLANDS B.V.

发明人： Beniamino SCIACCA ,  Sanjaysingh LALBAHADOERSING ,  Jia WANG

IPC分类号： G03F7/20 ,  G03F9/00

摘要： A resonant amplitude grating mark has a periodic structure configured to scatter radiation incident on a surface plane of the alignment mark. The scattering is mainly by excitation of a resonant mode in the periodic structure parallel to the surface plane. The effective refractive indexes and lengths of portions of the periodic structure are configured to provide an optical path length of the unit cell in the direction of periodicity that equals an integer multiple of a wavelength present in the spectrum of the radiation. The effective refractive indexes and lengths of the portions are also configured to provide an optical path length of the second portion in the direction of periodicity that is equal to half of the wavelength present in the spectrum of the radiation.

公开(公告)号：US20220252994A1

公开(公告)日：2022-08-11

申请号：US17626896

申请日：2020-06-15

申请人： ASML NETHERLANDS B.V.

发明人： Jin DAI ,  Sanjaysingh LALBAHADOERSING

IPC分类号： G03F9/00

摘要： A resonant amplitude grating mark has a periodic structure configured to scatter radiation incident on the mark. The scattering is mainly by coupling of the incident radiation to a waveguiding mode in the periodic structure. The effective refractive indexes and lengths of portions of the periodic structure are configured to provide an optical path length of the unit cell in the direction of periodicity that essentially equals an integer multiple of a wavelength present in the radiation. The effective refractive indexes and lengths of the portions are also configured to provide an optical path length of the second portion in the direction of periodicity that is selected from 0.30 to 0.49 of the wavelength present in the spectrum of the radiation.

公开(公告)号：US20190171120A1

公开(公告)日：2019-06-06

申请号：US16323123

申请日：2017-06-30

申请人： ASML NETHERLANDS B.V.

发明人： Cayetano SANCHEZ-FABRES COBALEDA ,  Sanjaysingh LALBAHADOERSING

IPC分类号： G03F9/00 ,  H01L23/544

CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453

摘要： A method for recovering alignment marks in a mark layer of a substrate, the method including providing a substrate with a mark layer covered by a resist layer; forming alignment marks in the mark layer, wherein an alignment mark is formed by: exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in the resist; forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist and subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.

公开(公告)号：US20200159134A1

公开(公告)日：2020-05-21

申请号：US16629359

申请日：2018-06-18

申请人： ASML NETHERLANDS B.V.

发明人： An GAO ,  Sanjaysingh LALBAHADOERSING ,  Audrey Alexandrovich NIKIPELOV ,  Alexey Olegovich POLYAKOV ,  Brennan PETERSON

IPC分类号： G03F9/00 ,  G03F7/20 ,  H01L23/544

摘要： An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.

公开(公告)号：US20180149981A1

公开(公告)日：2018-05-31

申请号：US15578312

申请日：2016-06-27

申请人： ASML Netherlands B.V.

发明人： Paul Cornelis Hubertus ABEN ,  Sanjaysingh LALBAHADOERSING ,  Jurgen Johnnes Henderikus Maria SCHOONUS

IPC分类号： G03F7/20 ,  G03F9/00

CPC分类号： G03F7/70516 ,  G03F7/70466 ,  G03F7/70633 ,  G03F7/70683 ,  G03F7/707 ,  G03F9/7019 ,  G03F9/708

摘要： A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.