公开(公告)号：US09971251B2

公开(公告)日：2018-05-15

申请号：US14905611

申请日：2014-08-06

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter Schmitt-Weaver ,  Wolfgang Henke ,  Thomas Leo Maria Hoogenboom ,  Pavel Izikson ,  Paul Frank Luehrmann ,  Daan Maurits Slotboom ,  Jens Staecker ,  Alexander Ypma

IPC: G03B27/42 ,  G03F7/20

CPC classification number: G03F7/70516 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633

Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.

公开(公告)号：US09507279B2

公开(公告)日：2016-11-29

申请号：US14069287

申请日：2013-10-31

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter Schmitt-Weaver ,  Paul Frank Luehrmann ,  Eduardus Johannes Gerardus Boon ,  Daan Maurits Slotboom ,  Jean-Philippe Xavier Van Damme ,  Wolfgang Henke ,  Alexander Ypma ,  Marc Jurian Kea

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70908 ,  G03F7/707 ,  G03F7/7085 ,  G03F7/70916 ,  G03F9/70

Abstract: A reticle is loaded into a lithographic apparatus. The apparatus performs measurements on the reticle, so as to calculate alignment parameters for transferring the pattern accurately to substrates. Tests are performed to detect possible contamination of the reticle or its support. Either operation proceeds with a warning, or the patterning of substrates is stopped. The test uses may use parameters of the alignment model itself, or different parameters. The integrity parameters may be compared against reference values reflecting historic measurements, so that sudden changes in a parameter are indicative of contamination. Integrity parameters may be calculated from residuals of the alignment model. In an example, height residuals are used to calculate parameters of residual wedge (Rx′) and residual roll (Ryy′). From these, integrity parameters expressed as height deviations are calculated and compared against thresholds.

Abstract translation: 将掩模版加载到光刻设备中。 该装置对掩模版进行测量，以便计算用于将图案精确地转印到基底上的对准参数。 执行测试以检测掩模版或其支撑体的可能污染。 任一操作都进行警告，或者停止基板的图案化。 测试使用可以使用对齐模型本身的参数或不同的参数。 可以将完整性参数与反映历史测量的参考值进行比较，使得参数中的突然变化指示污染。 可以从对齐模型的残差计算完整性参数。 在一个例子中，高度残差用于计算残余楔（Rx'）和残余辊（Ryy'）的参数。 从这些，计算表示为高度偏差的完整性参数，并将其与阈值进行比较。

公开(公告)号：US09715181B2

公开(公告)日：2017-07-25

申请号：US14103486

申请日：2013-12-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter Schmitt-Weaver ,  Paul Frank Luehrmann ,  Wolfgang Henke ,  Marc Jurian Kea

IPC: G03F7/20

CPC classification number: G03F7/70516

Abstract: A lithography tool is calibrated using a calibration substrate having a set of first marks distributed across its surface in a known pattern. The tool is operated to apply a pattern comprising a plurality of second marks at various positions on the substrate, each second mark overlying one of the first marks and being subject to an overlay error dependent on an apparatus-specific deviation. The second marks are applied by multiple exposures while the substrate remains loaded in the tool. An operating parameter of the apparatus is varied between the exposures. An overlay error is measured and used to calculate parameter-specific, apparatus-specific calibration data based on knowledge of the parameter variation used for each exposure.

公开(公告)号：US20140168627A1

公开(公告)日：2014-06-19

申请号：US14069287

申请日：2013-10-31

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Paul Frank Luehrmann ,  Eduardus Johannes Gerardus Boon ,  Daan Maurits Slotboom ,  Jean-Philippe Xavier Van Damme ,  Wolfgang Henke ,  Alexander Ypma ,  Marc Jurian Kea

IPC: G03F7/20

CPC classification number: G03F7/70908 ,  G03F7/707 ,  G03F7/7085 ,  G03F7/70916 ,  G03F9/70

Abstract: A reticle is loaded into a lithographic apparatus. The apparatus performs measurements on the reticle, so as to calculate alignment parameters for transferring the pattern accurately to substrates. Tests are performed to detect possible contamination of the reticle or its support. Either operation proceeds with a warning, or the patterning of substrates is stopped. The test uses may use parameters of the alignment model itself, or different parameters. The integrity parameters may be compared against reference values reflecting historic measurements, so that sudden changes in a parameter are indicative of contamination. Integrity parameters may be calculated from residuals of the alignment model. In an example, height residuals are used to calculate parameters of residual wedge (Rx′) and residual roll (Ryy′). From these, integrity parameters expressed as height deviations are calculated and compared against thresholds.

Abstract translation: 将掩模版加载到光刻设备中。 该装置对掩模版进行测量，以便计算用于将图案精确地转印到基底上的对准参数。 执行测试以检测掩模版或其支撑体的可能污染。 任一操作都进行警告，或者停止基板的图案化。 测试使用可以使用对齐模型本身的参数或不同的参数。 可以将完整性参数与反映历史测量的参考值进行比较，使得参数中的突然变化指示污染。 可以从对齐模型的残差计算完整性参数。 在一个例子中，高度残差用于计算残余楔（Rx'）和残余辊（Ryy'）的参数。 从这些，计算表示为高度偏差的完整性参数，并将其与阈值进行比较。

公开(公告)号：US10078273B2

公开(公告)日：2018-09-18

申请号：US15121340

申请日：2014-12-17

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter Schmitt-Weaver ,  Wolfgang Henke ,  Christopher Prentice ,  Frank Staals ,  Wim Tjibbo Tel

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70641 ,  G03F7/70725 ,  G03F9/7019 ,  G03F9/7026 ,  G03F9/7092

Abstract: A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor and an associated processor for obtaining a height map of the substrate surface prior to applying the pattern. A controller uses the height map to control focusing with respect to the projection system when applying the pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which the measurement signals are used to control the focusing, between the first and second regions. For example, an algorithm to calculate height values from optical measurement signals can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in the focusing.