公开(公告)号：US09971251B2

公开(公告)日：2018-05-15

申请号：US14905611

申请日：2014-08-06

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter Schmitt-Weaver ,  Wolfgang Henke ,  Thomas Leo Maria Hoogenboom ,  Pavel Izikson ,  Paul Frank Luehrmann ,  Daan Maurits Slotboom ,  Jens Staecker ,  Alexander Ypma

IPC: G03B27/42 ,  G03F7/20

CPC classification number: G03F7/70516 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633

Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.