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1.发明授权公开(公告)号：US11385550B2
公开(公告)日：2022-07-12
申请号：US16864456
申请日：2020-05-01
Applicant: ASML Netherlands B.V.
Inventor： Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
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公开(公告)号：US11054813B2
公开(公告)日：2021-07-06
申请号：US15763834
申请日：2016-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexander Ypma , David Frans Simon Deckers , Franciscus Godefridus Casper Bijnen , Richard Johannes Franciscus Van Haren , Weitian Kou
IPC: G05B19/418 , G03F7/20 , G03F9/00
Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.
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公开(公告)号：US10691863B2
公开(公告)日：2020-06-23
申请号：US15769539
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Everhardus Cornelis Mos , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier , Erik Jensen
IPC: G06F30/398 , G03F1/70 , G03F1/72 , G06F111/10
Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.
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公开(公告)号：US10545410B2
公开(公告)日：2020-01-28
申请号：US16076743
申请日：2017-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergun Cekli , Masashi Ishibashi , Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Reiner Maria Jungblut , Cedric Marc Affentauschegg , Ronald Henricus Johannes Otten
Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.
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公开(公告)号：US10331043B2
公开(公告)日：2019-06-25
申请号：US15118440
申请日：2015-01-29
Applicant: ASML Netherlands B.V.
Inventor： Henricus Wilhelmus Maria Van Buel , Johannes Marcus Maria Beltman , Xing Lan Liu , Hendrik Jan Hidde Smilde , Richard Johannes Franciscus Van Haren
IPC: G03F7/20 , G01N21/93 , G01N21/956
Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.
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Patent Agency Ranking
公开(公告)号：US09291916B2
公开(公告)日：2016-03-22
申请号：US14613687
申请日：2015-02-04
Applicant: ASML Netherlands B.V.
Inventor： Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren , Hubertus Johannes Gertrudus Simons , Remi Daniel Marie Edart , Xiuhong Wei , Irina Lyulina , Michael Kubis
CPC classification number: G03F7/70616 , G03F7/70141 , G03F7/70633 , G03F9/7003 , G03F9/7088
Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.
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公开(公告)号：US11300889B2
公开(公告)日：2022-04-12
申请号：US17267974
申请日：2019-07-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Subodh Singh , Ilya Malakhovsky , Ronald Henricus Johannes Otten , Amandev Singh
IPC: G03F7/20
Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.
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公开(公告)号：US11226567B2
公开(公告)日：2022-01-18
申请号：US16638552
申请日：2018-08-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Ilya Malakhovsky , Ronald Henricus Johannes Otten , Mahdi Sadeghinia
Abstract: Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.
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公开(公告)号：US11036146B2
公开(公告)日：2021-06-15
申请号：US15769339
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Peter Ten Berge , Peter Hanzen Wardenier , Erik Jensen , Hakki Ergün Cekli
Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.
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公开(公告)号：US10719011B2
公开(公告)日：2020-07-21
申请号：US15765489
申请日：2016-09-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Daan Maurits Slotboom , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier
Abstract: A method including: determining first error information based on a first measurement and/or simulation result pertaining to a first patterning device in a patterning system; determining second error information based on a second measurement and/or simulation result pertaining to a second patterning device in the patterning system; determining a difference between the first error information and the second error information; and creating modification information for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.
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