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公开(公告)号：US10545410B2
公开(公告)日：2020-01-28
申请号：US16076743
申请日：2017-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergun Cekli , Masashi Ishibashi , Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Reiner Maria Jungblut , Cedric Marc Affentauschegg , Ronald Henricus Johannes Otten
Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.
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公开(公告)号：US11300888B2
公开(公告)日：2022-04-12
申请号：US16485499
申请日：2018-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Ilya Malakhovsky , Ronald Henricus Johannes Otten
Abstract: A method and control system for determining stress in a substrate. The method includes determining a measured position difference between a measured position of at least one first feature and a measured position of at least one second feature which have been applied on a substrate, and determining local stress in the substrate from the measured position difference.
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公开(公告)号：US11300889B2
公开(公告)日：2022-04-12
申请号：US17267974
申请日：2019-07-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Subodh Singh , Ilya Malakhovsky , Ronald Henricus Johannes Otten , Amandev Singh
IPC: G03F7/20
Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.
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公开(公告)号：US11226567B2
公开(公告)日：2022-01-18
申请号：US16638552
申请日：2018-08-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Ilya Malakhovsky , Ronald Henricus Johannes Otten , Mahdi Sadeghinia
Abstract: Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.
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