-
公开(公告)号：US20230185990A1
公开(公告)日：2023-06-15
申请号：US18095515
申请日：2023-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
CPC classification number: G06F30/20 , G03F7/705 , G03F7/70625 , G03F7/70683 , G03F7/70633 , G03F9/7046 , G06F2111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
-
公开(公告)号：US10691863B2
公开(公告)日：2020-06-23
申请号：US15769539
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Everhardus Cornelis Mos , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier , Erik Jensen
IPC: G06F30/398 , G03F1/70 , G03F1/72 , G06F111/10
Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.
-
公开(公告)号：US11036146B2
公开(公告)日：2021-06-15
申请号：US15769339
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Peter Ten Berge , Peter Hanzen Wardenier , Erik Jensen , Hakki Ergün Cekli
Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.
-
公开(公告)号：US10719011B2
公开(公告)日：2020-07-21
申请号：US15765489
申请日：2016-09-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Daan Maurits Slotboom , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier
Abstract: A method including: determining first error information based on a first measurement and/or simulation result pertaining to a first patterning device in a patterning system; determining second error information based on a second measurement and/or simulation result pertaining to a second patterning device in the patterning system; determining a difference between the first error information and the second error information; and creating modification information for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.
-
公开(公告)号：US10996573B2
公开(公告)日：2021-05-04
申请号：US16474692
申请日：2017-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , David Frans Simon Deckers , Peter Hanzen Wardenier
Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.
-
Patent Agency Ranking
6.发明授权公开(公告)号：US09958789B2
公开(公告)日：2018-05-01
申请号：US15186031
申请日：2016-06-17
Applicant: ASML Netherlands B.V.
Inventor： Peter Hanzen Wardenier , Frank Staals , Jean-Pierre Agnes Henricus Marie Vaessen , Hans Van Der Laan
CPC classification number: G03F7/70591 , G01B11/03 , G03F7/70616 , G03F7/70625 , G03F7/70633
Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.
-
公开(公告)号：US12204826B2
公开(公告)日：2025-01-21
申请号：US18095515
申请日：2023-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
IPC: G03F7/00 , G03F9/00 , G06F30/20 , G06F111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
-
公开(公告)号：US11580274B2
公开(公告)日：2023-02-14
申请号：US15559759
申请日：2016-03-24
Applicant: ASML Netherlands B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
IPC: G03F7/20 , G06F30/20 , G03F9/00 , G06F111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
-
公开(公告)号：US10915689B2
公开(公告)日：2021-02-09
申请号：US15769338
申请日：2016-09-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Everhardus Cornelis Mos , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier , Erik Jensen , Bernardo Kastrup , Michael Kubis , Johannes Catharinus Hubertus Mulkens , David Frans Simon Deckers , Wolfgang Helmut Henke , Joungchel Lee
IPC: G06F17/50 , G03F1/00 , G06F30/398 , G03F7/20 , G03F1/72 , G06F119/22 , G06F119/18 , G03B27/68
Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.
-
10.发明授权公开(公告)号：US09786044B2
公开(公告)日：2017-10-10
申请号：US14971887
申请日：2015-12-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Andreas Fuchs , Peter Hanzen Wardenier , Amandev Singh , Maxime D'Alfonso , Hilko Dirk Bos
CPC classification number: G06T7/0004 , G03F7/70633 , G03F7/70941 , G06T7/11 , G06T2207/30148
Abstract: A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such as overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and −1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive intensity defects due to stray radiation (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly substrate (process) dependent. Calibration measurements are made on a few representative target gratings having biases. The calibration measurements are made, using not only different substrate rotations but also complementary apertures. Corrections are calculated and applied to correct asymmetry, to reduce error caused by stray radiation.
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.014 seconds)
