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公开(公告)号：US10962887B2
公开(公告)日：2021-03-30
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US11061336B2
公开(公告)日：2021-07-13
申请号：US16493835
申请日：2018-03-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Hubertus Johannes Gertrudus Simons , Everhardus Cornelis Mos , Xiuhong Wei , Reza Mahmoodi Baram , Hadi Yagubizade , Yichen Zhang
Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.
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Patent Agency Ranking
公开(公告)号：US10527958B2
公开(公告)日：2020-01-07
申请号：US16132520
申请日：2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US11300886B2
公开(公告)日：2022-04-12
申请号：US16637792
申请日：2018-07-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Hadi Yagubizade , Ahmet Koray Erdamar , Hakki Ergün Cekli
IPC: G03F7/20
Abstract: A method for correcting values of one or more feed-forward parameters used in a process of patterning substrates, the method including: obtaining measured overlay and/or alignment error data of a patterned substrate; and calculating one or more correction values for the one or more feed-forward parameters in dependence on the measured overlay and/or alignment error data.
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公开(公告)号：US11029610B2
公开(公告)日：2021-06-08
申请号：US16650520
申请日：2018-09-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van T Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US11809088B2
公开(公告)日：2023-11-07
申请号：US17636452
申请日：2020-07-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Hadi Yagubizade , Min-Seok Kim , Yingchao Cui , Daan Maurits Slotboom , Jeonghyun Park , Jeroen Cottaar
CPC classification number: G03F7/70483
Abstract: A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.
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公开(公告)号：US11669017B2
公开(公告)日：2023-06-06
申请号：US16762982
申请日：2018-11-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Roy Werkman , Bijoy Rajasekharan , Lydia Marianna Vergaij-Huizer , Jochem Sebastiaan Wildenberg , Ronald Van Ittersum , Pieter Gerardus Jacobus Smorenberg , Robertus Wilhelmus Van Der Heijden , Xiuhong Wei , Hadi Yagubizade
IPC: G03F7/20
CPC classification number: G03F7/70458 , G03F7/70616
Abstract: A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.
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