公开(公告)号：US11662666B2

公开(公告)日：2023-05-30

申请号：US17441353

申请日：2020-03-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Rowin Meijerink ,  Putra Saputra ,  Pieter Gerardus Jacobus Smorenberg ,  Theo Wilhelmus Maria Thijssen ,  Khalid Elbattay ,  Ma Su Su Hlaing ,  Paul Derwin ,  Bo Zhong ,  Masaya Komatsu

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70258 ,  G03F7/70725

Abstract: A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

公开(公告)号：US11768441B2

公开(公告)日：2023-09-26

申请号：US17801381

申请日：2021-02-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Steven Erik Steen ,  Pieter Gerardus Jacobus Smorenberg ,  Khalid Elbattay

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70525

Abstract: A method for controlling a process of manufacturing semiconductor devices, the method including: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data including data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on the bonded substrate metrology data, the determining a correction including determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.

公开(公告)号：US11448973B2

公开(公告)日：2022-09-20

申请号：US16954384

申请日：2018-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Manouk Rijpstra ,  Cornelis Johannes Henricus Lambregts ,  Wim Tjibbo Tel ,  Sarathi Roy ,  Cédric Désiré Grouwstra ,  Chi-Fei Nien ,  Weitian Kou ,  Chang-Wei Chen ,  Pieter Gerardus Jacobus Smorenberg

IPC: G03F7/20

Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

公开(公告)号：US11669017B2

公开(公告)日：2023-06-06

申请号：US16762982

申请日：2018-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy Werkman ,  Bijoy Rajasekharan ,  Lydia Marianna Vergaij-Huizer ,  Jochem Sebastiaan Wildenberg ,  Ronald Van Ittersum ,  Pieter Gerardus Jacobus Smorenberg ,  Robertus Wilhelmus Van Der Heijden ,  Xiuhong Wei ,  Hadi Yagubizade

IPC: G03F7/20

CPC classification number: G03F7/70458 ,  G03F7/70616

Abstract: A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.