Sub-Resolution Assist Features
    9.
    发明申请

    公开(公告)号:US20210247689A1

    公开(公告)日:2021-08-12

    申请号:US17240265

    申请日:2021-04-26

    摘要: Methods of semiconductor device fabrication are provided. In an embodiment, a method of semiconductor device fabrication includes receiving a first mask design comprising a first mask function, determining a transmission cross coefficient (TCC) of an exposure tool, decomposing the TCC into a plurality orders of eigenvalues and a plurality orders of eigenfunctions, calculating a kernel based on the plurality orders of eigenvalues and the plurality orders of eigenfunctions; and determining a first sub-resolution assist feature (SRAF) seed map by convoluting the first mask function and the kernel.