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公开(公告)号：US12054393B2
公开(公告)日：2024-08-06
申请号：US17206774
申请日：2021-03-19
发明人： Tian-Fu Zhang , Li-Hui Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C01B32/188 , C01B32/196 , B82Y40/00
CPC分类号： C01B32/188 , C01B32/196 , B82Y40/00 , C01B2204/06 , C01B2204/32
摘要： A method for making a graphene nanoribbon composite structure includes providing a substrate including a plurality of protrusions spaced apart from each other. A graphene film is grown on a growth substrate, an adhesive layer is on a surface of the graphene film away from the growth substrate. After removing the growth substrate, the graphene film and the adhesive layer are cleaned with water or an organic solvent. The graphene film, the adhesive layer, and the substrate are combined and then are dried, so that a plurality of wrinkles are formed near the plurality of protrusions. The adhesive layer is removed, and after etching a surface of the graphene film away from the substrate, the graphene films except for the plurality of wrinkles are removed, to form a plurality of graphene nanoribbons.
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公开(公告)号：US20210157239A1
公开(公告)日：2021-05-27
申请号：US17144312
申请日：2021-01-08
发明人： MO CHEN , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.
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公开(公告)号：US20200150526A1
公开(公告)日：2020-05-14
申请号：US16734440
申请日：2020-01-06
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A method of making microstructures, including: setting a photoresist layer on a base; covering the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer so that the carbon nanotube layer is sandwiched between the patterned chrome layer and the substrate, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the patterned chrome layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.
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公开(公告)号：US10553444B2
公开(公告)日：2020-02-04
申请号：US16008205
申请日：2018-06-14
发明人： Mo Chen , Li-Hui Zhang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/308
摘要： A method of making nanoscale belts including: providing a semiconductor thin film, placing stripe masks on the semiconductor thin film, the thickness of the stripe masks is H, the spacing distance between adjacent stripe masks is L; depositing a first thin film layer along a first direction, the thickness of the first thin film layer is D, a first angle between first direction and a direction along thickness of the stripe masks is θ1, θ1
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公开(公告)号：US10424479B2
公开(公告)日：2019-09-24
申请号：US15851903
申请日：2017-12-22
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Xiao-Yang Xiao , Jin Zhang , Shou-Shan Fan
IPC分类号： H01L21/027 , H01L21/285 , H01L29/417 , H01L21/033 , H01L29/786 , H01L21/32
摘要： A method of making nano-scaled channel, the method including: locating a first photoresist layer, a nanowire structure, and a second photoresist layer on a surface of a substrate, and the nanowire structure being sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises an nanowire; forming an opening in the first photoresist layer and the second photoresist layer to expose a portion of the surface of the substrate to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening, and both ends of the nanowire are sandwiched between the first photoresist layer and the second photoresist layer; and depositing a thin film layer on the exposed surface of the substrate using the a nanowire as a mask, wherein the thin film layer defines a nano-scaled channel corresponding to the at least one nanowire.
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公开(公告)号：US09261777B2
公开(公告)日：2016-02-16
申请号：US14456612
申请日：2014-08-11
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
CPC分类号： B81C1/00111 , B82Y40/00 , G03F7/0002
摘要： A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent bar-shaped protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent bar-shaped protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.
摘要翻译： 提供了制备三维纳米结构阵列的方法。 该方法包括以下步骤。 提供基地。 掩模层位于基座上。 掩模层被图案化，并且在掩模层的表面上形成多个条形突起结构，在突出结构的数量的两个相邻的棒状突出结构中的每一个之间限定很多，以暴露部分 的基地。 基底的暴露部分通过狭槽进行蚀刻，使得两个相邻的棒状突出结构中的每一个开始相互倾斜，直到它们彼此接触以形成突出对。 去除掩模层。
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7.发明授权Light emitting diode with three-dimensional nano-structures on a semiconductor layer and an active layer 有权在半导体层和有源层上具有三维纳米结构的发光二极管公开(公告)号：US08981342B2
公开(公告)日：2015-03-17
申请号：US14093692
申请日：2013-12-02
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/38 , H01L33/382
摘要： A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and a surface of the active layer, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译： 提供了包括第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极与第一半导体层的第一表面电连接并覆盖第一半导体层的第一表面。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面和有源层的表面上，并且每个三维纳米结构的横截面为M形。
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公开(公告)号：US11947261B2
公开(公告)日：2024-04-02
申请号：US17150220
申请日：2021-01-15
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.
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公开(公告)号：US10942452B2
公开(公告)日：2021-03-09
申请号：US16734438
申请日：2020-01-06
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a patterned chrome layer on a surface of the substrate; a carbon nanotube layer on the patterned chrome layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the carbon nanotube layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.
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公开(公告)号：US20200150525A1
公开(公告)日：2020-05-14
申请号：US16734438
申请日：2020-01-06
发明人： MO CHEN , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a patterned chrome layer on a surface of the substrate; a carbon nanotube layer on the patterned chrome layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the carbon nanotube layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.
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