- 专利标题: Photomask laser etch
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申请号: US16510855申请日: 2019-07-12
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公开(公告)号: US10802392B2公开(公告)日: 2020-10-13
- 发明人: Banqiu Wu , Eli Dagan
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson + Sheridan, LLP
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; G03F1/54 ; G03F1/46 ; G03F1/80
摘要:
Embodiments described herein relate to apparatus and methods for removing one or more films from a photomask to create a black border and one or more pellicle anchor areas thereon. A photomask substrate is exposed by removing the one or more films in the black border and pellicle anchor areas. The black border prevents a pattern on the photomask from overlapping a pattern on a substrate being processed. To create the black border and pellicle anchor areas, a laser beam is projected through a lens and focused on a surface of the films. The films are ablated by the laser beam without damaging the photomask substrate.
公开/授权文献
- US20200057362A1 PHOTOMASK LASER ETCH 公开/授权日:2020-02-20
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