Reticle cleaning system
    3.
    发明授权

    公开(公告)号:US11675264B2

    公开(公告)日:2023-06-13

    申请号:US17208468

    申请日:2021-03-22

    摘要: A reticle cleaning system includes a casing, a reticle holder, and a static charge reducing device. The reticle holder is in the casing and configured to hold a reticle. The static charge reducing device is above the reticle holder and includes a fluid generator, an ionizer, and a static charge sensor. The fluid generator is configured to control a humidity condition in the casing. The ionizer is configured to provide ionized air molecules to the reticle. The static charge sensor is configured to detect a static charge value on the reticle, wherein the ionizer is between the fluid generator and the static charge sensor.

    Lithography system and operation method thereof

    公开(公告)号:US11550233B2

    公开(公告)日:2023-01-10

    申请号:US16410426

    申请日:2019-05-13

    IPC分类号: G03F7/20 H05G2/00

    摘要: A method including steps as follows is provided. A primary droplet and a satellite droplet are shot toward an excitation zone. The satellite droplet is deflected away from the excitation zone. A laser beam is emitted toward the excitation zone to excite the primary droplet to generate an extreme ultraviolet (EUV) light. The EUV light is directed onto a reticle using a first optical reflector, such that the EUV light is imparted with a pattern of the reticle. The EUV light with the pattern is directed onto a wafer using a second optical reflector.

    Lithography apparatus and method using the same

    公开(公告)号:US10775706B2

    公开(公告)日:2020-09-15

    申请号:US16143715

    申请日:2018-09-27

    IPC分类号: G03F7/20 G02B27/09 G02F1/1343

    摘要: A method of lithography includes obtaining a profile of a single field of a substrate that having a photoresist layer thereon, in which the profile includes a first feature and a second feature having different heights. A depth of focus distribution map is generated according to the profile. A project lens is tuned based on the generated depth of focus distribution map, such that the project lens provides a first focus length in a first project pixel of the project lens and a second focus length in a second project pixel of the project lens, wherein the first focus length and the second focus lengths. The single field of the substrate is exposed by using the tuned project lens.