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公开(公告)号：US20230367197A1
公开(公告)日：2023-11-16
申请号：US18359954
申请日：2023-07-27
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US20220350235A1
公开(公告)日：2022-11-03
申请号：US17809979
申请日：2022-06-30
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US20220066312A1
公开(公告)日：2022-03-03
申请号：US17007920
申请日：2020-08-31
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US12124163B2
公开(公告)日：2024-10-22
申请号：US18359954
申请日：2023-07-27
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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公开(公告)号：US11860530B2
公开(公告)日：2024-01-02
申请号：US17809979
申请日：2022-06-30
发明人： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
摘要： A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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