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公开(公告)号：US20230095970A1
公开(公告)日：2023-03-30
申请号：US17893000
申请日：2022-08-22
Applicant: Applied Materials, Inc.
Inventor： Zhiyu HUANG , Chi-I LANG , Yung-chen LIN , Ho-yung HWANG , Gabriela ALVA , Wayne R. FRENCH
Abstract: Embodiments of the present disclosure generally relate to methods for enhancing photoresist (PR) to have improved profile control. A method for treating a PR includes positioning a workpiece within a process region of a processing chamber, where the workpiece contains a patterned PR disposed on an underlayer, and treating the patterned PR by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a treated patterned PR which is denser and harder than the patterned PR. The SIS process includes one or more infiltration cycles of exposing the patterned PR to a precursor containing silicon or boron, infiltrating the patterned PR with the precursor, purging to remove remnants of the precursor, exposing the patterned PR to an oxidizing agent, infiltrating the patterned PR with the oxidizing agent to produce oxide coating disposed on inner surfaces of the patterned PR, and purging to remove remnants of the oxidizing agent.
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公开(公告)号：US20230215735A1
公开(公告)日：2023-07-06
申请号：US17986028
申请日：2022-11-14
Applicant: Applied Materials, Inc.
Inventor： Lei LIAO , Yung-chen LIN , Chi-I LANG , Ho-yung David HWANG
IPC: H01L21/311 , H01J37/32
CPC classification number: H01L21/31116 , H01J37/32568 , H01J37/3211 , H01J37/32449 , H01J2237/332
Abstract: A method of forming features over a semiconductor substrate is provided. The method includes supplying a gas mixture over a surface of a substrate at a continuous flow rate. A first radio frequency (RF) signal is delivered to an electrode while the gas mixture is supplied at the continuous flow rate to deposit a polymer layer over the surface of the substrate. The surface of the substrate includes an oxide containing portion and a nitride containing portion. A second RF signal is delivered to the electrode while continuously supplying the gas mixture at the continuous flow rate to selectively etch the oxide containing portion relative to the nitride containing portion.
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公开(公告)号：US20230033038A1
公开(公告)日：2023-02-02
申请号：US17859838
申请日：2022-07-07
Applicant: Applied Materials, Inc.
Inventor： Yung-chen LIN , Chi-I LANG , Ho-yung HWANG
IPC: H01L21/768 , H01L23/522 , H01L21/033
Abstract: Methods for formation of a layer stack during a back-end-of-line (BEOL) process flow and the layer stack formed therefrom are provided. In one or more embodiments, the method utilizes a two-dimensional (2D) self-aligned scheme with a subtractive metal etch. The method includes using a hard mask to form a via with a small width which is formed through or contacts each of a first metal layer and a second metal layer. The via is filled with a metal gapfill to connect the first metal layer and the second metal layer. Each of the first metal layer and the second metal layer are patterned to form a plurality of features.
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公开(公告)号：US20240142869A1
公开(公告)日：2024-05-02
申请号：US18237628
申请日：2023-08-24
Applicant: Applied Materials, Inc.
Inventor： Yung-chen LIN , Zhiyu HUANG , Chi-I LANG , Ho-yung HWANG
Abstract: Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and includes positioning a workpiece within a process region of a processing chamber, where the workpiece has a carbon hardmask layer disposed on or over an underlying layer, and treating the carbon hardmask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hardmask which is denser than the carbon hardmask layer. The SIS process includes exposing and infiltrating the carbon hardmask layer with an aluminum precursor, purging to remove gaseous remnants, exposing and infiltrating the carbon hardmask layer to an oxidizing agent to produce an aluminum oxide coating disposed on inner surfaces of the carbon hardmask layer, and purging the process region to remove gaseous remnants.
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公开(公告)号：US20220392752A1
公开(公告)日：2022-12-08
申请号：US17663937
申请日：2022-05-18
Applicant: Applied Materials, Inc.
Inventor： Yung-chen LIN , Chi-I LANG , Ho-yung HWANG
IPC: H01J37/32 , H01L21/3065
Abstract: Embodiments of the present disclosure generally relate to methods for etching materials. In one or more embodiments, the method includes positioning a substrate in a process volume of a process chamber, where the substrate includes a metallic ruthenium layer disposed thereon, and exposing the metallic ruthenium layer to an oxygen plasma to produce a solid ruthenium oxide on the metallic ruthenium layer and a gaseous ruthenium oxide within the process volume. The method also includes exposing the solid ruthenium oxide to a secondary plasma to convert the solid ruthenium oxide to either metallic ruthenium or a ruthenium oxychloride compound. The metallic ruthenium is in a solid state on the metallic ruthenium layer or the ruthenium oxychloride compound is in a gaseous state within the process volume.
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Patent Agency Ranking
公开(公告)号：US20240419081A1
公开(公告)日：2024-12-19
申请号：US18738731
申请日：2024-06-10
Applicant: Applied Materials, Inc.
Inventor： Lin ZHOU , Gabriela ALVA , Zhiyu HUANG , Yung-chen LIN , Chi-I LANG
Abstract: Embodiments discloses herein describe methods for treating a substrate. In one example, a method of treating a layer of a film stack includes pre-treating a surface of an underlayer of a film stack formed on a substrate and forming a metal oxide in a photoresist layer of the film stack by heating a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer disposed on top of and in contact with an underlayer, and the underlayer disposed on top of a substrate. The metal oxide implanted photoresist later is then etched.
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公开(公告)号：US20240145245A1
公开(公告)日：2024-05-02
申请号：US18237639
申请日：2023-08-24
Applicant: Applied Materials, Inc.
Inventor： Yung-chen LIN , Zhiyu HUANG , Chi-I LANG , Ho-yung HWANG
IPC: H01L21/033 , C23C16/26 , C23C16/50 , G03F7/26 , H01L21/311
CPC classification number: H01L21/0337 , C23C16/26 , C23C16/50 , G03F7/265 , H01L21/31144
Abstract: Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and includes positioning a workpiece within a process region of a processing chamber, where the workpiece has a carbon hardmask layer disposed on or over an underlying layer, and treating the carbon hardmask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hardmask which is denser than the carbon hardmask layer. The SIS process includes exposing and infiltrating the carbon hardmask layer with an aluminum precursor, purging to remove gaseous remnants, exposing and infiltrating the carbon hardmask layer to an oxidizing agent to produce an aluminum oxide coating disposed on inner surfaces of the carbon hardmask layer, and purging the process region to remove gaseous remnants.
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公开(公告)号：US20240142870A1
公开(公告)日：2024-05-02
申请号：US18237648
申请日：2023-08-24
Applicant: Applied Materials, Inc.
Inventor： Yung-chen LIN , Zhiyu HUANG , Chi-I LANG , Ho-yung HWANG
Abstract: Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and includes positioning a workpiece within a process region of a processing chamber, where the workpiece has a carbon hardmask layer disposed on or over an underlying layer, and treating the carbon hardmask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hardmask which is denser than the carbon hardmask layer. The SIS process includes exposing and infiltrating the carbon hardmask layer with an aluminum precursor, purging to remove gaseous remnants, exposing and infiltrating the carbon hardmask layer to an oxidizing agent to produce an aluminum oxide coating disposed on inner surfaces of the carbon hardmask layer, and purging the process region to remove gaseous remnants.
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公开(公告)号：US20220189786A1
公开(公告)日：2022-06-16
申请号：US17456255
申请日：2021-11-23
Applicant: Applied Materials, Inc.
Inventor： Yung-chen LIN , Chi-I LANG , Ho-yung HWANG
IPC: H01L21/3213 , H01L21/02
Abstract: A method and apparatus for patterning semiconductor materials using tin-based materials as mandrels, hardmasks, and liner materials are provided. One or more implementations of the present disclosure use tin-oxide and/or tin-carbide materials as hardmask materials, mandrel materials, and/or liner material during various patterning applications. Tin-oxide or tin-carbide materials are easy to strip relative to other high selectivity materials like metal oxides (e.g., TiO2, ZrO2, HfO2, Al2O3) to avoid influencing critical dimensions and generate defects. In addition, tin-oxide and tin-carbide have low refractive index, k-value, and are transparent under 663-nm for lithography overlay.
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公开(公告)号：US20200273705A1
公开(公告)日：2020-08-27
申请号：US16800351
申请日：2020-02-25
Applicant: Applied Materials, Inc.
Inventor： Tejinder SINGH , Suketu Arun PARIKH , Daniel Lee DIEHL , Michael Anthony STOLFI , Jothilingam RAMALINGAM , Yong CAO , Lifan YAN , Chi-I LANG , Hoyung David HWANG
IPC: H01L21/033 , H01L21/311
Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.
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