公开(公告)号：US20200273705A1

公开(公告)日：2020-08-27

申请号：US16800351

申请日：2020-02-25

Applicant: Applied Materials, Inc.

Inventor： Tejinder SINGH ,  Suketu Arun PARIKH ,  Daniel Lee DIEHL ,  Michael Anthony STOLFI ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Lifan YAN ,  Chi-I LANG ,  Hoyung David HWANG

IPC: H01L21/033 ,  H01L21/311

Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

公开(公告)号：US20200373159A1

公开(公告)日：2020-11-26

申请号：US16853500

申请日：2020-04-20

Applicant: Applied Materials, Inc.

Inventor： Takehito KOSHIZAWA ,  Rui CHENG ,  Tejinder SINGH ,  Hidetaka OSHIO

IPC: H01L21/033 ,  H01L21/311

Abstract: In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.

公开(公告)号：US20230115004A1

公开(公告)日：2023-04-13

申请号：US18081499

申请日：2022-12-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder SINGH ,  Lifan YAN ,  Abhijit B. MALLICK ,  Daniel Lee DIEHL ,  Ho-yung HWANG ,  Jothilingam RAMALINGAM

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/308 ,  H01L21/033

Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

公开(公告)号：US20220013359A1

公开(公告)日：2022-01-13

申请号：US17459839

申请日：2021-08-27

Applicant: Applied Materials, Inc.

Inventor： Takehito KOSHIZAWA ,  Rui CHENG ,  Tejinder SINGH ,  Hidetaka OSHIO

IPC: H01L21/033 ,  H01L21/311

Abstract: In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.

公开(公告)号：US20210033974A1

公开(公告)日：2021-02-04

申请号：US16890867

申请日：2020-06-02

Applicant: Applied Materials, Inc.

Inventor： Tejinder SINGH ,  Lifan YAN ,  Abhijit B. MALLICK ,  Daniel Lee DIEHL ,  Ho-yung HWANG ,  Jothilingam RAMALINGAM

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308

Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.