公开(公告)号：US20230215735A1

公开(公告)日：2023-07-06

申请号：US17986028

申请日：2022-11-14

Applicant: Applied Materials, Inc.

Inventor： Lei LIAO ,  Yung-chen LIN ,  Chi-I LANG ,  Ho-yung David HWANG

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32568 ,  H01J37/3211 ,  H01J37/32449 ,  H01J2237/332

Abstract: A method of forming features over a semiconductor substrate is provided. The method includes supplying a gas mixture over a surface of a substrate at a continuous flow rate. A first radio frequency (RF) signal is delivered to an electrode while the gas mixture is supplied at the continuous flow rate to deposit a polymer layer over the surface of the substrate. The surface of the substrate includes an oxide containing portion and a nitride containing portion. A second RF signal is delivered to the electrode while continuously supplying the gas mixture at the continuous flow rate to selectively etch the oxide containing portion relative to the nitride containing portion.