公开(公告)号：US20240419081A1

公开(公告)日：2024-12-19

申请号：US18738731

申请日：2024-06-10

Applicant: Applied Materials, Inc.

Inventor： Lin ZHOU ,  Gabriela ALVA ,  Zhiyu HUANG ,  Yung-chen LIN ,  Chi-I LANG

IPC: G03F7/38 ,  G03F7/004 ,  G03F7/20

Abstract: Embodiments discloses herein describe methods for treating a substrate. In one example, a method of treating a layer of a film stack includes pre-treating a surface of an underlayer of a film stack formed on a substrate and forming a metal oxide in a photoresist layer of the film stack by heating a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer disposed on top of and in contact with an underlayer, and the underlayer disposed on top of a substrate. The metal oxide implanted photoresist later is then etched.