公开(公告)号：US20240304488A1

公开(公告)日：2024-09-12

申请号：US18665134

申请日：2024-05-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Chi TSAI ,  Chueh-Chi KUO

IPC分类号： H01L21/683 ,  G03F7/00 ,  G03F7/20

CPC分类号： H01L21/6833 ,  G03F7/2041 ,  G03F7/70708

摘要： An electrostatic substrate holder for use in an extreme ultraviolet radiation lithography system includes a substrate receiving surface having a plurality of gas passages in fluid communication with a variable gas pressure pump. Varying the pressure in a void space between the backside of the substrate and the substrate receiving surface of the substrate holder promotes removal of non-gaseous materials within the void space between the backside of the substrate and the substrate receiving surface of the substrate holder.

公开(公告)号：US12085867B2

公开(公告)日：2024-09-10

申请号：US18360618

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Jie Lee ,  Shih-Chun Huang ,  Shih-Ming Chang ,  Ken-Hsien Hsieh ,  Yung-Sung Yen ,  Ru-Gun Liu

IPC分类号： G03F9/00 ,  G03F7/20

CPC分类号： G03F9/7026 ,  G03F7/2004 ,  G03F7/2041

摘要： A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.

公开(公告)号：US12085857B2

公开(公告)日：2024-09-10

申请号：US16928777

申请日：2020-07-14

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Tsutomu Ogihara ,  Yusuke Biyajima ,  Masahiro Kanayama

IPC分类号： G03F7/11 ,  C08G77/18 ,  C08G77/26 ,  C09D183/06 ,  C09D183/08 ,  G03F7/00 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC分类号： G03F7/11 ,  C08G77/18 ,  C08G77/26 ,  C09D183/06 ,  C09D183/08 ,  G03F7/70383 ,  H01L21/0274 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31138 ,  H01L21/32139

摘要： A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R2 and R3 are each independently the same as R1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R100 represents a divalent organic group substituted with a fluorine atom; R101 and R102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.

公开(公告)号：US12019372B2

公开(公告)日：2024-06-25

申请号：US16867435

申请日：2020-05-05

申请人： THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

发明人： Zhenan Bao ,  Yuanwen Jiang

IPC分类号： G03F7/032 ,  A61B5/282 ,  A61B5/296 ,  C08G81/02 ,  C09D5/24 ,  C09D187/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  H01B1/12 ,  H01B13/00

CPC分类号： G03F7/032 ,  A61B5/282 ,  A61B5/296 ,  C08G81/024 ,  C09D5/24 ,  C09D187/005 ,  G03F7/162 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/26 ,  H01B1/127 ,  H01B13/0036 ,  A61B2562/125

摘要： One or more embodiments relate to an electrically conductive polymer with a crosslinkable additive. The electrically conductive polymer is a directly photopatternable Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) PEDOT:PSS film with cross-linked network made of a plurality of monomers. The directly photopatternable PEDOT:PSS film PEDOT as such has a better conductivity and stretchability compared to its other counterparts. The directly photopatternable PEDOT:PSS film can further be supplemented with poly(ethylene glycol) diacrylate (PEGDA) which can help with the removal of PSS. Advantageously, the PEGDA supplemented PEDOT:PSS film can exhibit a larger charge storage capacity.

公开(公告)号：US11994805B2

公开(公告)日：2024-05-28

申请号：US18153708

申请日：2023-01-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shih-Ming Chang ,  Chiu-Hsiang Chen ,  Ru-Gun Liu

IPC分类号： G03F7/00 ,  G03F7/20

CPC分类号： G03F7/70341 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2041

摘要： A method of operating a semiconductor apparatus includes generating an air flow that flows from a covering structure; causing a photomask to move over the covering structure such that particles attached to the photomask are blown away from the photomask by the air flow; and irradiating the photomask with light through a light transmission region of the covering structure.

公开(公告)号：US11675268B2

公开(公告)日：2023-06-13

申请号：US15931811

申请日：2020-05-14

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Daisuke Kori ,  Takayoshi Nakahara ,  Takashi Sawamura ,  Hironori Satoh ,  Yasuyuki Yamamoto

IPC分类号： G03F7/09 ,  C08G61/02 ,  C09D165/00 ,  G03F7/16 ,  G03F7/004 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/027

CPC分类号： G03F7/094 ,  C08G61/02 ,  C09D165/00 ,  G03F7/0045 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0276 ,  C08G2261/11 ,  C08G2261/148 ,  C08G2261/149 ,  C08G2261/1414 ,  C08G2261/1422 ,  C08G2261/228 ,  C08G2261/314 ,  C08G2261/3142

摘要： A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) or (1B), and an organic solvent, where Ar1 and Ar2 represent a benzene ring or naphthalene ring which optionally have a substituent; X represents a single bond or methylene group; a broken line represents a bonding arm; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and W1 represents a hydroxyl group, an alkyloxy group having 1 to 10 carbon atoms, or an organic group having at least one aromatic ring optionally having a substituent. A composition for forming an organic film, the composition containing a polymer with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film.

公开(公告)号：US20190004434A1

公开(公告)日：2019-01-03

申请号：US16063583

申请日：2016-12-08

申请人： ASML NETHERLANDS B.V.

发明人： Erik Henricus Egidius Catharina EUMMELEN ,  Giovanni Luca GATTOBIGIO ,  Johannes Cornelis Paulus MELMAN ,  Han Henricus Aldegonda LEMPENS ,  Miao YU ,  Cornelius Maria ROPS ,  Ruud OLIESLAGERS ,  Artunç ULUCAN ,  Theodorus Wilhelmus POLET ,  Patrick Johannes Wilhelmus SPRUYTENBURG

IPC分类号： G03F7/20 ,  H01L21/027

CPC分类号： G03F7/70341 ,  G03F7/2041 ,  G03F7/70258 ,  G03F7/70716 ,  H01L21/0274

摘要： An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

公开(公告)号：US20180275518A1

公开(公告)日：2018-09-27

申请号：US15994521

申请日：2018-05-31

申请人： FUJIFILM Corporation

发明人： Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC分类号： G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  C08F220/16 ,  C08F220/28

CPC分类号： G03F7/11 ,  C08F220/16 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/091 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

摘要： One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

公开(公告)号：US10082733B2

公开(公告)日：2018-09-25

申请号：US15299871

申请日：2016-10-21

申请人： JSR CORPORATION

发明人： Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Gouji Wakamatsu ,  Kentarou Gotou ,  Yukio Nishimura ,  Takeo Shioya

IPC分类号： G03F7/04 ,  G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC分类号： G03F7/0046 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

摘要： An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

公开(公告)号：US20180267402A1

公开(公告)日：2018-09-20

申请号：US15920744

申请日：2018-03-14

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Jun Hatakeyama ,  Takayuki Fujiwara

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/038

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2037 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/38

摘要： A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.