Abstract:
An object of the present invention is to provide a pattern forming method with which a pattern excellent in terms of critical resolution and the in-plane evenness of resolution may be formed. Another object of the present invention is to provide a method for producing an electronic device in which the pattern forming method is used. A pattern forming method according to the present invention is a pattern forming method including a step 1 of forming a resist film on a substrate with an actinic ray- or radiation-sensitive resin composition including a resin X, a molecular weight of the resin X reducing as a result of a backbone of the resin X being broken by an action of exposure, an acid, or a base, a step 2 of exposing the resist film to light, and a step 3 of developing the resist film with a developer including an organic solvent to remove an exposed portion to form a pattern. The pattern forming method may further include a step 4 of cleaning the pattern using a rinse liquid including an organic solvent subsequent to the step 3. In the case where the pattern forming method does not include the step 4 subsequent to the step 3, the developer is a chemical solution including two or more types of organic solvents. In the case where the pattern forming method includes the step 4 subsequent to the step 3, at least one of the developer or the rinse liquid is a chemical solution including two or more types of organic solvents. The chemical solution including two or more types of organic solvents includes at least an organic solvent having a boiling point of 100° C. or more.
Abstract:
The present invention provides a method for testing a photosensitive composition and a method for producing a photosensitive composition that can easily test whether or not the photosensitive composition exhibits a predetermined LWR. The method for testing a photosensitive composition has a step 1 of using a reference photosensitive composition including an acid decomposable resin having a group that is decomposed by an action of an acid to generate a polar group and a photoacid generator, to form a resist film on a substrate, exposing the resist film, using a developer to perform a development treatment to form a resist pattern, and obtaining any one reference data selected from the group consisting of a line width or a space width of a line-shaped resist pattern, an opening diameter of an opening portion in the resist pattern, and a dot diameter of a dot-like resist pattern; a step 2 of using a photosensitive composition for measurement including components of the same types as types of components included in the reference photosensitive composition, to form a resist film on a substrate, exposing the resist film, using a developer to perform a development treatment to form a resist pattern, and obtaining measurement data of the resist pattern; and a step 3 of performing comparison between the reference data and the measurement data to determine whether or not an allowable range is satisfied, wherein the developer is an organic solvent-based developer including an aliphatic hydrocarbon solvent, an aromatic hydrocarbon, and at least one metal atom selected from the group consisting of Al, Fe, and Ni, and a mass ratio of a content of the aromatic hydrocarbon to a content of the metal atom in the developer is 5.0×104 to 2.0×1010.
Abstract:
A first object of the present invention is to provide a pattern forming method in which even if the time from the end of exposure treatment to the start of development treatment (waiting time before development) varies, a variation in the line width of a pattern to be formed is small. A second object of the present invention is to provide a method for producing an electronic device, the method relating to the pattern forming method. A third object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition and a resist film that are suitable for the pattern formation. The pattern forming method according to the present invention includes a step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition,
a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent.
The composition satisfies a requirement A1 or a requirement A2 below.
Requirement A1: The composition includes a resin X1 having a group that decreases polarity due to action of exposure, acid, base, or heating. Requirement A2: The composition includes a resin X2 having a polar group, and a compound that reacts with the polar group due to action of exposure, acid, base, or heating.
Abstract:
An object of the present invention is to provide a pattern forming method with which a pattern having excellent resolution performance and LER performance can be formed. In addition, another object of the present invention is to provide a method for manufacturing an electronic device, an actinic ray-sensitive or radiation-sensitive resin composition, and a resist film. A pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, an exposing step of exposing the resist film, and a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including two or more ion pairs which are decomposed by an irradiation with an actinic ray or a radiation and having a molecular weight of 5,000 or less, and a solvent.
Abstract:
An actinic ray-sensitive or radiation-sensitive resin composition includes a resin A having polarity that increases by an action of an acid; one or more resins B selected from the group consisting of a resin B1 including a fluorine atom and having polarity that increases by the action of an acid, a resin B2 including a fluorine atom and having polarity that increases by the action of an alkali, and a resin B3 including a fluorine atom and having polarity that increases by any of an action of an acid and an action of an alkali; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more selected from the group consisting of a compound (I) to a compound (III), provided that the resin B1 to the resin B3 include no repeating unit including an ion-bonding group.
Abstract:
Provided are a composition for forming an upper layer film for a photoresist, including a polymer having a molecular weight distribution in which a peak area of a high-molecular-weight component having a weight-average molecular weight of 40,000 or more accounts for 0.1% or less with respect to the entire peak area in the molecular weight distribution, measured by the gel permeation chromatography.
Abstract:
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) including a repeating unit (i) having a group which decomposes by the action of an acid represented by the following General Formula (1), a pattern forming method using the composition, a method for manufacturing an electronic device, and an electronic device.
Abstract:
A pattern forming method includes, in this order: a step (1) of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing at least a resin having a group that is decomposed due to an action of an acid so as to generate a polar group; a step (2) of exposing the film; a step (3) of causing the exposed film to come into contact with a component that performs any one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction with a polar group generated in the exposed film without substantially dissolving the exposed film; and a step (4) of forming a pattern by developing the exposed film by using a developer including an organic solvent and removing an area of the film having a small exposure amount.
Abstract:
Provided is a method of forming a pattern, including forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising, resin (A) comprising any of repeating units of general formula (I) below, which resin when acted on by an acid, decreases its solubility in a developer comprising an organic solvent, and a compound (B) expressed by any of general formulae (B-1) to (B-3) below, which compound when exposed to actinic rays or radiation, generates an acid, exposing the film to actinic rays or radiation, and developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.
Abstract:
There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.