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公开(公告)号：US12085857B2
公开(公告)日：2024-09-10
申请号：US16928777
申请日：2020-07-14
IPC分类号： G03F7/11 , C08G77/18 , C08G77/26 , C09D183/06 , C09D183/08 , G03F7/00 , H01L21/027 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , G03F7/40 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： G03F7/11 , C08G77/18 , C08G77/26 , C09D183/06 , C09D183/08 , G03F7/70383 , H01L21/0274 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/325 , G03F7/38 , G03F7/40 , H01L21/3081 , H01L21/3086 , H01L21/31138 , H01L21/32139
摘要： A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R2 and R3 are each independently the same as R1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R100 represents a divalent organic group substituted with a fluorine atom; R101 and R102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.
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公开(公告)号：US12032293B2
公开(公告)日：2024-07-09
申请号：US16841773
申请日：2020-04-07
CPC分类号： G03F7/11 , C08G61/02 , C08L83/04 , G03F7/34 , G03F7/70283 , C08G2261/135 , C08G2261/3142 , C08G2261/90 , H01L21/31144
摘要： A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure. Thus, the present invention provides: a composition for forming an organic film the composition containing such a thermosetting polymer with high carbon content as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film
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3.发明公开公开(公告)号：US20230244149A1
公开(公告)日：2023-08-03
申请号：US18184709
申请日：2023-03-16
IPC分类号： G03F7/11 , C08G77/18 , C08G77/26 , C09D183/06 , C09D183/08 , G03F7/20 , H01L21/027
CPC分类号： G03F7/11 , C08G77/18 , C08G77/26 , C09D183/06 , C09D183/08 , G03F7/70383 , H01L21/0274 , G03F7/162
摘要： A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R2 and R3 are each independently the same as R1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R100 represents a divalent organic group substituted with a fluorine atom; R101 and R102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.
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公开(公告)号：US11592287B2
公开(公告)日：2023-02-28
申请号：US16808637
申请日：2020-03-04
发明人： Tsutomu Ogihara , Tsukasa Watanabe , Yoshio Kawai , Tomohiro Kobayashi , Yusuke Biyajima , Masahiro Kanayama
摘要： A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.
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公开(公告)号：US11555697B2
公开(公告)日：2023-01-17
申请号：US16808637
申请日：2020-03-04
发明人： Tsutomu Ogihara , Tsukasa Watanabe , Yoshio Kawai , Tomohiro Kobayashi , Yusuke Biyajima , Masahiro Kanayama
摘要： A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.
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公开(公告)号：US11480879B2
公开(公告)日：2022-10-25
申请号：US16808664
申请日：2020-03-04
IPC分类号： G03F7/11 , C09D183/06 , C09D183/08 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , H01L21/027 , H01L21/311
摘要： The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.
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公开(公告)号：US10811247B2
公开(公告)日：2020-10-20
申请号：US15937986
申请日：2018-03-28
摘要： A cleaning and drying method of a semiconductor substrate capable of suppressing collapse or breakdown of a pattern which occur at the time of drying a cleaning solution after cleaning the substrate and decomposition of a resin at a bottom of the pattern, and capable of removing the cleaning solution with good efficiency without using a specific device.
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公开(公告)号：US20190258160A1
公开(公告)日：2019-08-22
申请号：US16274416
申请日：2019-02-13
IPC分类号： G03F7/004
摘要： A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure.
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公开(公告)号：US10241412B2
公开(公告)日：2019-03-26
申请号：US15915748
申请日：2018-03-08
发明人： Hiroko Nagai , Takeru Watanabe , Daisuke Kori , Tsutomu Ogihara
IPC分类号： G03F7/11 , G03F7/09 , C07C39/14 , C07C39/15 , C07C49/83 , C08F220/28 , C08F220/32 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , H01L21/266 , H01L21/308 , H01L21/311
摘要： Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.
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10.发明授权公开(公告)号：US09880470B2
公开(公告)日：2018-01-30
申请号：US14855772
申请日：2015-09-16
IPC分类号： C09D183/00 , G03F7/11 , H01L21/3213 , H01L21/308 , H01L21/311 , H01L21/02 , H01L21/033 , C09D183/10 , C08G77/48 , G03F7/075
CPC分类号： G03F7/11 , C08G77/48 , C09D183/10 , G03F7/0752 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/31111 , H01L21/31144 , H01L21/32139
摘要： A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.
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