公开(公告)号：US12164231B2

公开(公告)日：2024-12-10

申请号：US17591741

申请日：2022-02-03

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masaaki Kotake ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Masaki Ohashi

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.

公开(公告)号：US20240385517A1

公开(公告)日：2024-11-21

申请号：US18652343

申请日：2024-05-01

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Keiichi Masunaga ,  Satoshi Watanabe ,  Masahiro Fukushima ,  Masaaki Kotake ,  Yuta Matsuzawa

IPC: G03F7/004 ,  G03F1/24 ,  G03F7/039

Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.

公开(公告)号：US20240377738A1

公开(公告)日：2024-11-14

申请号：US18658310

申请日：2024-05-08

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Keiichi Masunaga ,  Satoshi Watanabe ,  Masahiro Fukushima ,  Masaaki Kotake ,  Yuta Matsuzawa

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/32

Abstract: A chemically amplified negative resist composition comprising (A) a quencher in the form of an onium salt containing an anion having a nitrogen-containing aliphatic heterocycle and a fluorocarboxylic acid structure and (B) a base polymer is provided. The resist composition forms a pattern of rectangular profile with improved LER, resolution, fidelity, and dose margin.

公开(公告)号：US20230341775A1

公开(公告)日：2023-10-26

申请号：US18137081

申请日：2023-04-20

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masaaki Kotake ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Masahiro Fukushima ,  Kenji Funatsu ,  Yuta Matsuzawa

IPC: G03F7/039 ,  C08F212/14 ,  G03F7/004 ,  G03F1/22

CPC classification number: G03F7/0397 ,  C08F212/24 ,  G03F7/0045 ,  G03F1/22

Abstract: A chemically amplified positive resist composition is provided comprising (A) an acid diffusion-controlling agent in the form of an onium salt compound having a specific phenoxide anion, (B) a polymer comprising specific repeat units and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer, and (C) a photoacid generator. A resist pattern with a high resolution, reduced LER, and improved CDU is formed. Because of minimal defects, the resist pattern can be inspected with light of short wavelength 300-400 nm.

公开(公告)号：US20220308451A1

公开(公告)日：2022-09-29

申请号：US17691352

申请日：2022-03-10

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Keiichi Masunaga ,  Satoshi Watanabe ,  Kenji Funatsu ,  Masaaki Kotake ,  Naoya Inoue

IPC: G03F7/039 ,  C08F212/14 ,  G03F1/50

Abstract: A chemically amplified positive resist composition is provided comprising a base polymer which contains a polymer comprising an acid generating unit, a phenolic hydroxy group-containing unit, a unit containing a phenolic hydroxy group protected with an acid labile group, and a unit containing a carboxy group protected with an acid labile group. A resist pattern with a high resolution, reduced LER, improved rectangularity, and minimized influence of develop loading can be formed.

公开(公告)号：US20200278607A1

公开(公告)日：2020-09-03

申请号：US16158103

申请日：2018-10-11

Applicant: International Business Machines Corporation ,  Shin-Etsu Chemical Co., Ltd.

Inventor： Luisa D. Bozano ,  Daisuke Domon ,  Yoshio Kawai ,  Keiichi Masunaga ,  Martha I. Sanchez ,  Daniel P. Sanders ,  Ratnam Sooriyakumaran ,  Linda K. Sundberg ,  Satoshi Watanabe

IPC: G03F7/004 ,  G03F7/20 ,  C08F220/18 ,  C08F220/30 ,  G03F7/038 ,  G03F7/32

Abstract: A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

公开(公告)号：US20180180998A1

公开(公告)日：2018-06-28

申请号：US15854990

申请日：2017-12-27

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masaaki Kotake ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Kenji Yamada ,  Masaki Ohashi

IPC: G03F7/038 ,  G03F7/004 ,  C07C323/20 ,  C08F212/14

Abstract: A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

公开(公告)号：US20180180992A1

公开(公告)日：2018-06-28

申请号：US15854244

申请日：2017-12-26

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masaaki Kotake ,  Keiichi Masunaga ,  Satoshi Watanabe ,  Masaki Ohashi

IPC: G03F7/004 ,  C07C381/12

CPC classification number: G03F7/004 ,  C07C317/04 ,  C07C317/28 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/033 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/2059 ,  G03F7/322

Abstract: A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

公开(公告)号：US09944738B2

公开(公告)日：2018-04-17

申请号：US15206684

申请日：2016-07-11

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Daisuke Domon ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Masaaki Kotake

IPC: C08F216/10 ,  G03F1/78 ,  G03F7/039 ,  G03F7/09 ,  G03F7/20 ,  G03F7/32 ,  C08F220/38

CPC classification number: C08F216/10 ,  C08F220/38 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/093 ,  G03F7/2059 ,  G03F7/322 ,  C08F216/02 ,  C08F212/32 ,  C08F216/1416 ,  C08F2220/382

Abstract: A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), wherein Mb+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.

公开(公告)号：US09645493B2

公开(公告)日：2017-05-09

申请号：US15091092

申请日：2016-04-05

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Daisuke Domon ,  Keiichi Masunaga ,  Satoshi Watanabe

IPC: G03F7/004 ,  G03F7/038 ,  C08F220/18 ,  C07C381/12 ,  C08F220/24 ,  C08F220/30 ,  G03F1/76 ,  G03F1/78 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/038 ,  C07C381/12 ,  C08F220/18 ,  C08F220/24 ,  C08F220/30 ,  G03F1/76 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2059 ,  G03F7/327

Abstract: A negative resist composition is provided comprising (A) a polymer comprising recurring units having an acid-eliminatable group and recurring units capable of generating acid upon exposure and (B) a carboxylic acid onium salt. When the negative resist composition is processed by the microprocessing technology, especially EB lithography, it forms a pattern having a very high resolution and minimal LER.