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公开(公告)号：US12001140B2
公开(公告)日：2024-06-04
申请号：US17169757
申请日：2021-02-08
申请人： FUJIFILM Corporation
IPC分类号： G03F7/039 , C08F212/14 , C08F220/18 , C08F220/58 , G03F7/038
CPC分类号： G03F7/039 , C08F212/24 , C08F220/1806 , C08F220/585 , G03F7/038
摘要： The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin having a polarity that increases by the action of an acid; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin has a repeating unit represented by General Formula (B-1).
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公开(公告)号：US20240176242A1
公开(公告)日：2024-05-30
申请号：US18412068
申请日：2024-01-12
申请人： FUJIFILM Corporation
IPC分类号： G03F7/039 , C08F212/08 , C08F212/14 , C08F220/22 , C08F220/28 , G03F7/038
CPC分类号： G03F7/039 , C08F212/08 , C08F212/22 , C08F212/24 , C08F220/22 , C08F220/282 , C08F220/283 , G03F7/038
摘要： A first object of the present invention is to provide a pattern forming method in which even if the time from the end of exposure treatment to the start of development treatment (waiting time before development) varies, a variation in the line width of a pattern to be formed is small. A second object of the present invention is to provide a method for producing an electronic device, the method relating to the pattern forming method. A third object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition and a resist film that are suitable for the pattern formation.
The pattern forming method according to the present invention includes a step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition,
a step of exposing the resist film, and
a step of developing the exposed resist film with a developer including an organic solvent.
The composition satisfies a requirement A1 or a requirement A2 below.
Requirement A1: The composition includes a resin X1 having a group that decreases polarity due to action of exposure, acid, base, or heating.
Requirement A2: The composition includes a resin X2 having a polar group, and a compound that reacts with the polar group due to action of exposure, acid, base, or heating.-
公开(公告)号：US20240168382A1
公开(公告)日：2024-05-23
申请号：US18370578
申请日：2023-09-20
发明人： Jun Hatakeyama , Tatsuya Yamahira , Yuki Suda
IPC分类号： G03F7/039 , C08F212/14 , C08F220/18 , C08F220/22
CPC分类号： G03F7/0392 , C08F212/24 , C08F220/1806 , C08F220/22
摘要： A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having formula (1).
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公开(公告)号：US20240111212A1
公开(公告)日：2024-04-04
申请号：US18234049
申请日：2023-08-15
发明人： Jun Hatakeyama , Tomomi Watanabe
IPC分类号： G03F7/039 , C08F212/14 , C08F220/18 , C08F220/22 , G03F7/038
CPC分类号： G03F7/0392 , C08F212/24 , C08F220/1806 , C08F220/22 , G03F7/0382
摘要： A resist composition comprising a polymer is provided, the polymer comprising photo-decomposable repeat units derived from a sulfonium salt having a polymerizable unsaturated bond, a sulfonium cation site, and a link therebetween, the link having a urethane bond, thiourethane bond or urea bond. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.
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公开(公告)号：US20240027910A1
公开(公告)日：2024-01-25
申请号：US18156580
申请日：2023-01-19
发明人： Jinkyun Lee , Yejin Ku , Jihoon Woo
IPC分类号： G03F7/11 , C08F212/14 , C08F220/14 , C09D125/18 , C09D133/12 , H01L21/027
CPC分类号： G03F7/11 , C08F212/24 , C08F220/14 , C09D125/18 , C09D133/12 , H01L21/0274 , C08F2810/30
摘要： A underlayer composition for photolithography includes a copolymer, wherein the copolymer includes a first repeating unit having a first functional group. The first functional group is represented by one of Chemical Formulas 1 to 4.
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公开(公告)号：US20230341775A1
公开(公告)日：2023-10-26
申请号：US18137081
申请日：2023-04-20
发明人： Masaaki Kotake , Satoshi Watanabe , Keiichi Masunaga , Masahiro Fukushima , Kenji Funatsu , Yuta Matsuzawa
IPC分类号： G03F7/039 , C08F212/14 , G03F7/004 , G03F1/22
CPC分类号： G03F7/0397 , C08F212/24 , G03F7/0045 , G03F1/22
摘要： A chemically amplified positive resist composition is provided comprising (A) an acid diffusion-controlling agent in the form of an onium salt compound having a specific phenoxide anion, (B) a polymer comprising specific repeat units and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer, and (C) a photoacid generator. A resist pattern with a high resolution, reduced LER, and improved CDU is formed. Because of minimal defects, the resist pattern can be inspected with light of short wavelength 300-400 nm.
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公开(公告)号：US11796916B2
公开(公告)日：2023-10-24
申请号：US17227511
申请日：2021-04-12
发明人： Xisen Hou , Cong Liu , Irvinder Kaur
IPC分类号： G03F7/11 , G03F7/09 , G03F7/16 , C08F220/68 , H01L21/027 , C09D133/16 , G03F7/00 , G03F7/40 , C09D133/02 , G03F7/039 , G03F7/004 , C08F212/14
CPC分类号： G03F7/11 , C08F212/24 , C08F220/68 , C09D133/02 , C09D133/16 , G03F7/0035 , G03F7/0048 , G03F7/039 , G03F7/094 , G03F7/168 , G03F7/40 , G03F7/405 , H01L21/0274
摘要： A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.
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公开(公告)号：US11720021B2
公开(公告)日：2023-08-08
申请号：US17062048
申请日：2020-10-02
发明人： Jun Hatakeyama , Masahiro Fukushima
IPC分类号： G03F7/004 , G03F7/039 , C08F212/14 , C08F220/18 , C08F220/30 , C08F20/52 , C08F220/56
CPC分类号： G03F7/039 , C08F20/52 , C08F212/24 , C08F220/1808 , C08F220/30 , C08F220/303 , C08F220/56
摘要： A positive resist composition comprising a base polymer comprising recurring units (a) containing an imide group having an iodized aromatic group bonded thereto and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and size variation.
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公开(公告)号：US11703760B2
公开(公告)日：2023-07-18
申请号：US17223256
申请日：2021-04-06
发明人： Jun Hatakeyama , Masahiro Fukushima
IPC分类号： G03F7/004 , G03F7/11 , G03F7/039 , G03F7/038 , C07C69/653 , C08F220/24 , C08F220/28 , C08F212/14 , C08F220/30 , C08F220/22
CPC分类号： G03F7/0392 , C07C69/653 , C08F212/24 , C08F220/22 , C08F220/24 , C08F220/281 , C08F220/282 , C08F220/283 , C08F220/301 , C08F220/303 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/11 , C07C2601/08
摘要： A fluorocarboxylic acid-containing polymer comprising recurring units having formula (A1), but not acid labile group-containing recurring units is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging or pattern collapse independent of whether it is of positive or negative tone.
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公开(公告)号：US11693316B2
公开(公告)日：2023-07-04
申请号：US17121190
申请日：2020-12-14
IPC分类号： G03F7/039 , G03F7/004 , G03F7/038 , C08F220/18 , C08F212/14 , C08F220/30 , C08F212/32 , C08F220/28
CPC分类号： G03F7/0392 , C08F212/24 , C08F212/32 , C08F220/1805 , C08F220/1806 , C08F220/1807 , C08F220/1808 , C08F220/1811 , C08F220/1818 , C08F220/281 , C08F220/301 , G03F7/0045 , G03F7/0382
摘要： A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1), and an acid generator component composed of an anion moiety and a cation moiety. In General Formula (a01-1), W1 represents a polymerizable group-containing group, Ct represents a tertiary carbon atom, R11 represents an unsaturated hydrocarbon group which may have a substituent, R12 and R13 represent a chain saturated hydrocarbon group which may have a substituent, and a carbon atom at an α-position of Ct constitutes a carbon-carbon unsaturated bond. In General Formula (a02-1), W2 represents a polymerizable group-containing group, Wa2 represents an aromatic hydrocarbon group, and n2 represents an integer in a range of 1 to 3
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