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1.发明公开公开(公告)号：US20240280900A1
公开(公告)日：2024-08-22
申请号：US18404506
申请日：2024-01-04
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masahiro Fukushima , Satoshi Watanabe , Keiichi Masunaga , Masaaki Kotake , Yuta Matsuzawa
IPC: G03F7/004 , C07C25/18 , C07C309/43 , C07C309/73 , C07C381/12 , C07D327/08 , C07D333/76 , G03F7/039
CPC classification number: G03F7/0045 , C07C25/18 , C07C309/43 , C07C309/73 , C07C381/12 , C07D327/08 , C07D333/76 , G03F7/0392 , C07C2601/08 , C07C2601/14 , C07C2601/18 , C07C2602/10 , C07C2602/42 , C07C2603/74
Abstract: This invention relates to an onium salt, a chemically amplified positive resist composition, and a resist pattern forming process. The invention provides an onium salt capable of generating an acid having an adequate acid strength and low diffusion, a chemically amplified positive resist composition comprising the onium salt, and a resist pattern forming process using the composition. The chemically amplified positive resist composition comprises an onium salt capable of generating an acid having an adequate acid strength and suppressed diffusion is provided.
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公开(公告)号：US20250053089A1
公开(公告)日：2025-02-13
申请号：US18797818
申请日：2024-08-08
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Keiichi Masunaga , Satoshi Watanabe , Masahiro Fukushima , Masaaki Kotake , Yuta Matsuzawa , Tatsumi Sueyoshi
IPC: G03F7/039 , C08F212/14
Abstract: A resist composition comprising a base polymer, a photoacid generator, and a quencher is provided. The base polymer contains a polymer comprising phenolic hydroxy-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. A resist film is processed into a pattern of satisfactory profile exhibiting a high resolution, reduced LER, and rectangularity while the influence of residue defects is restrained.
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公开(公告)号：US20250004371A1
公开(公告)日：2025-01-02
申请号：US18737106
申请日：2024-06-07
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masahiro Fukushima , Satoshi Watanabe , Kenji Funatsu , Keiichi Masunaga , Masaaki Kotake , Yuta Matsuzawa
Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising repeat units having a phenolic hydroxy group protected with a tertiary ether type acid labile group and an acid generator capable of generating a fluorinated aromatic sulfonic acid. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.
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公开(公告)号：US20240377741A1
公开(公告)日：2024-11-14
申请号：US18650997
申请日：2024-04-30
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Keiichi Masunaga , Satoshi Watanabe , Masahiro Fukushima , Masaaki Kotake , Yuta Matsuzawa
Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and a fluorocarboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.
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公开(公告)号：US20240385517A1
公开(公告)日：2024-11-21
申请号：US18652343
申请日：2024-05-01
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Keiichi Masunaga , Satoshi Watanabe , Masahiro Fukushima , Masaaki Kotake , Yuta Matsuzawa
Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.
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Patent Agency Ranking
公开(公告)号：US20240377738A1
公开(公告)日：2024-11-14
申请号：US18658310
申请日：2024-05-08
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Keiichi Masunaga , Satoshi Watanabe , Masahiro Fukushima , Masaaki Kotake , Yuta Matsuzawa
Abstract: A chemically amplified negative resist composition comprising (A) a quencher in the form of an onium salt containing an anion having a nitrogen-containing aliphatic heterocycle and a fluorocarboxylic acid structure and (B) a base polymer is provided. The resist composition forms a pattern of rectangular profile with improved LER, resolution, fidelity, and dose margin.
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公开(公告)号：US20230341775A1
公开(公告)日：2023-10-26
申请号：US18137081
申请日：2023-04-20
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masaaki Kotake , Satoshi Watanabe , Keiichi Masunaga , Masahiro Fukushima , Kenji Funatsu , Yuta Matsuzawa
IPC: G03F7/039 , C08F212/14 , G03F7/004 , G03F1/22
CPC classification number: G03F7/0397 , C08F212/24 , G03F7/0045 , G03F1/22
Abstract: A chemically amplified positive resist composition is provided comprising (A) an acid diffusion-controlling agent in the form of an onium salt compound having a specific phenoxide anion, (B) a polymer comprising specific repeat units and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer, and (C) a photoacid generator. A resist pattern with a high resolution, reduced LER, and improved CDU is formed. Because of minimal defects, the resist pattern can be inspected with light of short wavelength 300-400 nm.
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公开(公告)号：US20250028244A1
公开(公告)日：2025-01-23
申请号：US18740792
申请日：2024-06-12
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masahiro Fukushima , Satoshi Watanabe , Kenji Funatsu , Keiichi Masunaga , Masaaki Kotake , Yuta Matsuzawa
IPC: G03F7/039 , C07D305/06 , C07D307/12 , C07D309/06 , C07D319/12 , C07D333/16 , C07D335/02 , C07D493/08 , C08F212/14
Abstract: An acetal modifier affording a group having an oxygen or sulfur-containing cyclic saturated heterocycle serving as a protective group for an aliphatic or aromatic hydroxy group is provided as well as a polymer adapted to turn alkali soluble as a result of deprotection under the action of acid, the polymer comprising repeat units A1 having on side chain a structure including an aromatic hydroxy group protected with an acid labile group. A chemically amplified positive resist composition comprising the polymer is also provided.
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9.发明申请公开(公告)号：US20240427241A1
公开(公告)日：2024-12-26
申请号：US18680476
申请日：2024-05-31
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masahiro Fukushima , Satoshi Watanabe , Keiichi Masunaga , Kenji Funatsu , Masaaki Kotake , Yuta Matsuzawa
Abstract: The chemically amplified negative resist composition has improved in resolution during pattern formation, which can form a resist pattern having improved LER, fidelity, and dose margin. The chemically amplified negative resist composition comprises a polymer comprising repeat units derived from a monomer having a dehydrating functional group is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, fidelity, and dose margin.
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公开(公告)号：US20240329522A1
公开(公告)日：2024-10-03
申请号：US18610591
申请日：2024-03-20
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masahiro Fukushima , Satoshi Watanabe , Keiichi Masunaga , Masaaki Kotake , Yuta Matsuzawa
IPC: G03F7/004 , C08F212/14 , G03F1/76 , G03F7/038
CPC classification number: G03F7/0045 , C08F212/24 , G03F1/76 , G03F7/0382
Abstract: A chemically amplified negative resist composition comprising (A) a photoacid generator in the form of an onium salt of aromatic sulfonic acid whose anion has a ring structure fused to an aromatic ring having a sulfo group bonded thereto and another aromatic ring structure containing a bulky substituent and (B) a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and fidelity.
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