CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
    10.
    发明申请
    CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
    化学放大抗负荷组合物和模式过程

    公开(公告)号:US20140342274A1

    公开(公告)日:2014-11-20

    申请号:US14450725

    申请日:2014-08-04

    IPC分类号: G03F7/038 G03F7/20

    摘要: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.

    摘要翻译: 使用包含0.5-10摩尔%具有产酸能力的重复单元和50-99.5摩尔%的在碱性显影剂中溶解的重复单元的聚合物来配制化学放大的负性抗蚀剂组合物。 当在光刻工艺中使用时,组合物确保有效的灵敏度,使酸产生组分在抗蚀剂膜中的分布和扩散更均匀,并抑制底物界面处酸的失活。 该图案可以形成为在LER和底切方面得到改进的轮廓。