发明申请
- 专利标题： CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
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申请号： US17591719申请日： 2022-02-03
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公开(公告)号： US20220276557A1公开(公告)日： 2022-09-01
- 发明人: Keiichi Masunaga , Satoshi Watanabe , Masaaki Kotake , Masaki Ohashi
- 申请人： Shin-Etsu Chemical Co., Ltd.
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2021-020906 20210212
- 主分类号： G03F7/038
- IPC分类号： G03F7/038 ; G03F7/004 ; G03F7/20 ; G03F7/32
摘要：
A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.
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