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公开(公告)号：US10345700B2
公开(公告)日：2019-07-09
申请号：US14479378
申请日：2014-09-08
发明人： Luisa D. Bozano , Daisuke Domon , Yoshio Kawai , Keiichi Masunaga , Martha I. Sanchez , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda K. Sundberg , Satoshi Watanabe
IPC分类号： G03F7/20 , G03F7/038 , G03F7/32 , C08F220/18 , C08F220/30 , C08F220/24 , G03F7/004
摘要： A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.
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公开(公告)号：US20190113842A1
公开(公告)日：2019-04-18
申请号：US16142552
申请日：2018-09-26
发明人： Jun Hatakeyama , Daisuke Domon
摘要： A resist composition comprising a base polymer and a sulfonium salt of brominated indole or brominated indazole carboxylic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
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公开(公告)号：US09904172B2
公开(公告)日：2018-02-27
申请号：US14961046
申请日：2015-12-07
发明人： Kentaro Kumaki , Satoshi Watanabe , Koji Hasegawa , Daisuke Domon , Kenji Yamada
IPC分类号： G03F7/40 , C08L25/08 , C08L33/14 , C08L25/18 , C08F220/30 , C08F220/34 , C08F220/26 , C08F226/06 , C08F226/02 , G03F7/11 , C08F220/36 , G03F7/004 , G03F7/039 , G03F7/32 , C08F220/28 , G03F7/20
CPC分类号： G03F7/40 , C08F220/26 , C08F220/30 , C08F220/34 , C08F220/36 , C08F226/02 , C08F226/06 , C08F2220/283 , C08F2220/285 , C08L25/08 , C08L25/18 , C08L33/14 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2004 , G03F7/2041 , G03F7/325
摘要： A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.
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公开(公告)号：US09632417B2
公开(公告)日：2017-04-25
申请号：US14961197
申请日：2015-12-07
IPC分类号： G03F7/40 , G03F7/38 , G03F7/32 , G03F7/039 , G03F7/004 , G03F7/20 , C08L25/08 , C08L33/14 , C08L25/18
CPC分类号： G03F7/40 , C08L25/08 , C08L25/18 , C08L33/14 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2004 , G03F7/2037 , G03F7/2041 , G03F7/325 , G03F7/38
摘要： A shrink material is provided comprising a polymer comprising recurring units of formula (1) and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.
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公开(公告)号：US20160085149A1
公开(公告)日：2016-03-24
申请号：US14847335
申请日：2015-09-08
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/325 , G03F7/38 , H01L21/31116
摘要： A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl and/or hydroxyl group optionally substituted with an acid labile group, an oxirane or oxetane compound having a hydrophilic group, and an acid generator onto a substrate, prebaking, exposing, baking, and developing in an organic solvent so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high sensitivity and high dissolution contrast during organic solvent development and forms a fine hole or trench pattern via positive/negative reversal.
摘要翻译： 通过将包含具有任选被酸不稳定基团任选取代的羧基和/或羟基的重复单元，具有亲水基团的环氧乙烷或氧杂环丁烷化合物和酸产生剂的聚合物包含在基材上而形成负型图案， 在有机溶剂中预烘烤，曝光，烘烤和显影，使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。 抗蚀剂组合物在有机溶剂显影期间表现出高灵敏度和高溶解度对比度，并通过正/负反转形成细孔或沟槽图案。
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公开(公告)号：US20140342274A1
公开(公告)日：2014-11-20
申请号：US14450725
申请日：2014-08-04
CPC分类号： G03F7/0045 , C08F26/06 , C08F214/18 , C08F220/30 , G03F7/0046 , G03F7/0382 , G03F7/2041 , H01L21/0271 , Y10S430/114
摘要： A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.
摘要翻译： 使用包含0.5-10摩尔％具有产酸能力的重复单元和50-99.5摩尔％的在碱性显影剂中溶解的重复单元的聚合物来配制化学放大的负性抗蚀剂组合物。 当在光刻工艺中使用时，组合物确保有效的灵敏度，使酸产生组分在抗蚀剂膜中的分布和扩散更均匀，并抑制底物界面处酸的失活。 该图案可以形成为在LER和底切方面得到改进的轮廓。
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公开(公告)号：US08828645B2
公开(公告)日：2014-09-09
申请号：US14063752
申请日：2013-10-25
CPC分类号： G03F7/038 , G03F1/08 , G03F7/0045 , G03F7/0382 , G03F7/20 , Y10S430/111
摘要： There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.
摘要翻译： 公开了一种负性抗蚀剂组合物，其至少包含：（A）碱溶性碱性聚合物，并且通过酸的作用使其不溶于碱; （B）酸发生剂; 和（C）碱性成分，其中，所述基础聚合物至少含有包含由以下通式（1）和通式（2）表示的重均分子量为1,000〜10,000的聚合物。 可以存在在形成图案时难以引起桥的负的抗蚀剂组合物，并且提供高分辨率和使用其的图案化工艺。
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公开(公告)号：US11429023B2
公开(公告)日：2022-08-30
申请号：US16655571
申请日：2019-10-17
发明人： Daisuke Domon , Naoya Inoue , Masaki Ohashi , Keiichi Masunaga , Masaaki Kotake
IPC分类号： G03F7/004 , C07C311/48 , C07C381/12 , G03F1/50 , G03F1/76 , G03F1/78 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38
摘要： A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.
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公开(公告)号：US20200278607A1
公开(公告)日：2020-09-03
申请号：US16158103
申请日：2018-10-11
发明人： Luisa D. Bozano , Daisuke Domon , Yoshio Kawai , Keiichi Masunaga , Martha I. Sanchez , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda K. Sundberg , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/20 , C08F220/18 , C08F220/30 , G03F7/038 , G03F7/32
摘要： A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.
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10.发明授权公开(公告)号：US09969829B2
公开(公告)日：2018-05-15
申请号：US15399220
申请日：2017-01-05
发明人： Daisuke Domon , Koji Hasegawa , Keiichi Masunaga , Masaaki Kotake
IPC分类号： G03F7/004 , C08F212/14 , C08F220/30 , G03F7/038 , C08F220/24 , C08F220/18 , C07C381/12 , G03F1/00
CPC分类号： C08F212/14 , C07C381/12 , C08F220/18 , C08F220/24 , C08F220/30 , C08F2220/301 , C08F2500/03 , C08F2800/10 , G03F1/00 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/0382
摘要： The present invention provides a polymer compound containing a repeating unit shown by the following general formula (1). There can be provided a polymer compound usable in a negative resist composition that can achieve high resolution of 50 nm or less and small LER and cause very few defects, a negative resist composition using the polymer compound, and a patterning process using the negative resist composition.
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