公开(公告)号：US20230161254A1

公开(公告)日：2023-05-25

申请号：US17984448

申请日：2022-11-10

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Masayoshi Sagehashi ,  Kenji Yamada ,  Kazuhiro Katayama

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/029 ,  G03F7/20

CPC classification number: G03F7/0392 ,  G03F7/0048 ,  G03F7/029 ,  G03F7/2006

Abstract: A chemically amplified resist composition is provided comprising (A) a polymer P comprising repeat units having an acid labile group containing a fluorinated aromatic ring, repeat units having a phenolic hydroxy group, and repeat units adapted to generate an acid upon exposure, (B) an onium salt type quencher, and (C) a solvent. The resist composition exhibits a high sensitivity, low LWR and improved CDU when processed by photolithography.

公开(公告)号：US20180180998A1

公开(公告)日：2018-06-28

申请号：US15854990

申请日：2017-12-27

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masaaki Kotake ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Kenji Yamada ,  Masaki Ohashi

IPC: G03F7/038 ,  G03F7/004 ,  C07C323/20 ,  C08F212/14

Abstract: A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

公开(公告)号：US20160320699A1

公开(公告)日：2016-11-03

申请号：US15139831

申请日：2016-04-27

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Kenji Yamada ,  Satoshi Watanabe

IPC: G03F7/038 ,  G03F7/32 ,  G03F7/38 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/2059 ,  G03F7/325 ,  G03F7/38

Abstract: A pattern is formed by coating a resist composition comprising (A) a PPD inhibitor, (B) a polymer adapted to change its solubility in an organic solvent under the action of acid. (C) a photoacid generator, and (D) an organic solvent onto a substrate, baking, exposing the resist film, PEB, and developing in an organic solvent developer. The resist composition ensures to form a pattern in a consistent manner while inhibiting any CD shrinkage and pattern profile change due to a delay from PEB to development.

Abstract translation: 通过涂覆抗蚀剂组合物形成图案，所述抗蚀剂组合物包含（A）PPD抑制剂，（B）适于在酸的作用下改变其在有机溶剂中的溶解度的聚合物。 （C）光致酸产生剂，和（D）有机溶剂到基材上，烘烤，曝光抗蚀剂膜，PEB，并在有机溶剂显影剂中显影。 抗蚀剂组合物确保以一致的方式形成图案，同时抑制由于PEB到显影的延迟而导致的任何CD收缩和图案轮廓变化。

公开(公告)号：US11448961B2

公开(公告)日：2022-09-20

申请号：US16561456

申请日：2019-09-05

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Takayuki Fujiwara ,  Masaki Ohashi ,  Kazuhiro Katayama ,  Kenji Yamada

IPC: G03F7/004 ,  C07C59/115 ,  G03F7/039 ,  G03F7/038 ,  C07D207/27 ,  C07C43/225 ,  C08F220/16 ,  C08F220/28 ,  C08F212/14 ,  C09D133/08 ,  C09D133/14 ,  C09D125/14 ,  C07C25/18 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32

Abstract: A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.

公开(公告)号：US09904172B2

公开(公告)日：2018-02-27

申请号：US14961046

申请日：2015-12-07

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Kentaro Kumaki ,  Satoshi Watanabe ,  Koji Hasegawa ,  Daisuke Domon ,  Kenji Yamada

IPC: G03F7/40 ,  C08L25/08 ,  C08L33/14 ,  C08L25/18 ,  C08F220/30 ,  C08F220/34 ,  C08F220/26 ,  C08F226/06 ,  C08F226/02 ,  G03F7/11 ,  C08F220/36 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  C08F220/28 ,  G03F7/20

CPC classification number: G03F7/40 ,  C08F220/26 ,  C08F220/30 ,  C08F220/34 ,  C08F220/36 ,  C08F226/02 ,  C08F226/06 ,  C08F2220/283 ,  C08F2220/285 ,  C08L25/08 ,  C08L25/18 ,  C08L33/14 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2041 ,  G03F7/325

Abstract: A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.

公开(公告)号：US11609497B2

公开(公告)日：2023-03-21

申请号：US16730785

申请日：2019-12-30

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takeshi Sasami ,  Kenji Yamada ,  Jun Hatakeyama ,  Satoshi Watanabe

IPC: G03F7/039 ,  C07C381/12 ,  G03F7/004 ,  G03F7/20 ,  C08F212/08 ,  C08F220/38 ,  C08F220/28 ,  C08F220/24 ,  G03F7/32 ,  C08K5/095 ,  C08F220/30

Abstract: The present invention is a resist composition comprises a polymer compound having one or two repeating units selected from repeating units represented by the following general formulae (p-1), (p-2) and (p-3), a repeating unit represented by the following formula (a-1) and the formula (a-2) polarities of which are changed by an action of an acid, and a repeating unit represented by the following formula (b-1); a salt represented by the following general formula (B); and a solvent, wherein a difference of a C log P of the repeating unit (a-1) before and after changing the polarity is 3.0 to 4.5, and a difference of a C log P of the repeating unit (a-2) before and after changing the polarity is 2.5 to 3.2. This provides a resist composition which has high sensitivity, wide DOF and high resolution, reduces LER, LWR and CDU, and has good pattern shape after exposure and excellent etching resistance.

公开(公告)号：US20200081341A1

公开(公告)日：2020-03-12

申请号：US16561456

申请日：2019-09-05

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Takayuki Fujiwara ,  Masaki Ohashi ,  Kazuhiro Katayama ,  Kenji Yamada

IPC: G03F7/004 ,  C07C25/18 ,  C07C59/115 ,  G03F7/039 ,  G03F7/038 ,  C07D207/27 ,  C07C43/225 ,  C08F220/16 ,  C08F220/28 ,  C08F212/14 ,  C09D133/08 ,  C09D133/14 ,  C09D125/14

Abstract: A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.

公开(公告)号：US09921479B2

公开(公告)日：2018-03-20

申请号：US15139831

申请日：2016-04-27

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Kenji Yamada ,  Satoshi Watanabe

IPC: G03F7/039 ,  G03F7/32 ,  G03F7/16 ,  G03F7/38 ,  G03F7/20 ,  G03F7/11 ,  G03F7/004

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/2059 ,  G03F7/325 ,  G03F7/38

Abstract: A pattern is formed by coating a resist composition comprising (A) a PPD inhibitor, (B) a polymer adapted to change its solubility in an organic solvent under the action of acid, (C) a photoacid generator, and (D) an organic solvent onto a substrate, baking, exposing the resist film, PEB, and developing in an organic solvent developer. The resist composition ensures to form a pattern in a consistent manner while inhibiting any CD shrinkage and pattern profile change due to a delay from PEB to development.

公开(公告)号：US20180039175A1

公开(公告)日：2018-02-08

申请号：US15666757

申请日：2017-08-02

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Keiichi Masunaga ,  Satoshi Watanabe ,  Masaaki Kotake ,  Kenji Yamada ,  Masaki Ohashi

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/004

CPC classification number: G03F7/0045 ,  C07C69/753 ,  C07C303/32 ,  C07C309/04 ,  C07C309/06 ,  C07C309/17 ,  C07C309/19 ,  C07C309/23 ,  C07C309/24 ,  C07C309/29 ,  C07C309/30 ,  C07C309/31 ,  C07C309/32 ,  C07C309/35 ,  C07C309/44 ,  C07C309/58 ,  C08F212/02 ,  C08F220/22 ,  C08F220/24 ,  C08F220/30 ,  C08F220/38 ,  C08F222/10 ,  C08F224/00 ,  C08F228/02 ,  C08F2220/283 ,  C08F2220/303 ,  C08F2220/382 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2037 ,  G03F7/322 ,  G03F7/38

Abstract: A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

公开(公告)号：US20170184967A1

公开(公告)日：2017-06-29

申请号：US15372622

申请日：2016-12-08

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Teppei Adachi ,  Ryosuke Taniguchi ,  Koji Hasegawa ,  Kenji Yamada

IPC: G03F7/038 ,  C07D307/93 ,  C07D307/94 ,  C07D493/18 ,  G03F7/32 ,  C07D307/77 ,  C08F220/28 ,  C08F220/18 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16 ,  C07D493/20

CPC classification number: G03F7/0382 ,  C07D307/77 ,  C07D307/93 ,  C07D307/94 ,  C07D493/18 ,  C07D493/20 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  C08F2800/20 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/327 ,  C08F2220/1891 ,  C08F220/20

Abstract: A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on γ-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.