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    Apparatus and method for multi-directionally scanning a beam of charged particles
    1.
    发明授权
    Apparatus and method for multi-directionally scanning a beam of charged particles 有权
    用于多方向扫描带电粒子束的装置和方法

    公开(公告)号：US08481959B2

    公开(公告)日：2013-07-09

    申请号：US13028188

    申请日：2011-02-15

    Applicant: John Ruffell

    Inventor： John Ruffell

    IPC: H01J37/256 ,  H01J3/14 ,  H01J3/18 ,  H01J3/26

    CPC classification number: H01L21/68764 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/1503 ,  H01J2237/20207 ,  H01J2237/30472 ,  H01L21/68771

    Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

    Abstract translation: 离子注入装置的系统和方法包括用于沿入射束轴产生离子束的离子源。 离子注入装置包括耦合到旋转机构的光束偏转组件，其使射束偏转组件围绕入射光束轴线旋转并偏转离子束。 至少一个晶片保持器保持目标晶片，并且旋转机构操作以将离子束引导到至少一个晶片保持器中的一个，其也旋转以保持恒定的注入角度。

    Techniques for preventing parasitic beamlets from affecting ion implantation
    3.
    发明授权
    Techniques for preventing parasitic beamlets from affecting ion implantation 有权
    防止寄生子束影响离子注入的技术

    公开(公告)号：US07482598B2

    公开(公告)日：2009-01-27

    申请号：US11567485

    申请日：2006-12-06

    Applicant: Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

    Inventor： Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

    Abstract: Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

    Abstract translation: 公开了用于防止寄生子束影响离子注入的技术。 在一个特定的示例性实施例中，技术可以被实现为用于防止寄生子束影响离子注入的装置。 该装置可以包括配置成来回扫描点波束的控制器，从而形成横跨预定宽度的离子束。 该装置还可以包括孔机构，如果保持静止，则允许点束通过。 该装置还可以包括耦合到控制器和孔机构的同步机构，其被配置为使得孔径机构与扫描的点光束同步地移动，允许扫描的光束穿过但阻挡一个或多个寄生 与点光束相关的子束。

    Spot grid array electron imaging system
    4.
    发明授权
    Spot grid array electron imaging system 有权
    点阵阵列电子成像系统

    公开(公告)号：US06946655B2

    公开(公告)日：2005-09-20

    申请号：US09986137

    申请日：2001-11-07

    Applicant: Gilad Almogy ,  Oren Reches

    Inventor： Gilad Almogy ,  Oren Reches

    IPC: G01Q10/00 ,  G01Q30/02 ,  G01Q30/06 ,  H01J37/28

    CPC classification number: H01J37/28 ,  H01J2237/024 ,  H01J2237/0635 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/2817

    Abstract: A high data-rate electron beam spot-grid array imaging system is provided that overcomes the low resolution and severe linearity requirements of prior art systems. Embodiments include an imaging system comprising an electron beam generator for simultaneously irradiating an array of spots spaced apart from each other on a surface of an object to be imaged, and a detector for collecting backscattered and/or secondary electrons emitted as a result of the interaction of the spots with the surface of the object to form an image of the irradiated portions of the object surface. A mechanical system moves the substrate in a direction which is nearly parallel to an axis of the array of spots such that as the substrate is moved across the spot array in the scan direction (the y-direction) the spots trace a path which leaves no gaps in the mechanical cross-scan direction (the x-direction). A compensator, such as a servo or a movable mirror, compensates for mechanical inaccuracies in the moving stage, thereby increasing imaging accuracy. In other embodiments, multiple detectors placed at different angles to the substrate collect electrons to provide multiple perspective imaging of the substrate surface.

    Abstract translation: 提供了高数据速率电子束点阵阵列成像系统，其克服了现有技术系统的低分辨率和严格的线性要求。 实施例包括一种成像系统，包括电子束发生器，用于同时照射待成像物体的表面上彼此间隔开的点阵列，以及用于收集由于相互作用而发射的反向散射和/或二次电子的检测器 具有物体表面的斑点以形成物体表面的照射部分的图像。 机械系统使基板沿着几乎平行于点阵列的轴线的方向移动，使得当基板在扫描方向（y方向）上移动穿过光点阵列时，斑点追踪不留下的路径 机械横向扫描方向（x方向）的间隙。 诸如伺服或可移动镜的补偿器补偿了移动台中的机械不准确度，从而提高了成像精度。 在其他实施例中，以与衬底不同的角度放置的多个检测器收集电子以提供衬底表面的多个透视成像。

    ION IMPLANTER AND ION IMPLANT METHOD THEREOF
    6.
    发明申请
    ION IMPLANTER AND ION IMPLANT METHOD THEREOF 有权
    离子植入物和离子植入方法

    公开(公告)号：US20130130484A1

    公开(公告)日：2013-05-23

    申请号：US13746257

    申请日：2013-01-21

    Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

    Inventor： ZHIMIN WAN ,  John D. POLLOCK ,  Don BERRIAN

    IPC: H01L21/265

    CPC classification number: H01L21/265 ,  C23C14/04 ,  C23C14/48 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

    Abstract: An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

    Abstract translation: 公开了一种离子注入机和离子注入方法。 基本上，晶片沿着一个方向移动，并且具有孔的孔径机构沿着另一个方向移动，使得被孔径过滤的离子束的投影面积在晶片上被二维地扫描。 因此，可以简化移动晶片所需的硬件和/或操作。 此外，当提供带状离子束时，孔的形状/尺寸可以类似于传统点波束的尺寸/形状，从而可以实现传统的二维扫描。 可选地，当将离子束注入到晶片中时，可以固定离子束路径而不扫描离子束，而在穿过离子束的孔移动期间，孔径的区域也可以是可调节的。

    ION IMPLANTER AND ION IMPLANT METHOD THEREOF
    7.
    发明申请
    ION IMPLANTER AND ION IMPLANT METHOD THEREOF 审中-公开
    离子植入物和离子植入方法

    公开(公告)号：US20110049383A1

    公开(公告)日：2011-03-03

    申请号：US12553946

    申请日：2009-09-03

    Applicant: ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

    Inventor： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

    IPC: C23C14/48 ,  H01J27/02

    CPC classification number: C23C14/48 ,  C23C14/04 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

    Abstract: An ion implanter and an ion implant method for achieving a two-dimensional implantation on a wafer are disclosed. The ion implanter includes an ion source, a mass analyzer, a wafer driving mechanism, an aperture mechanism, and an aperture driving mechanism. The ion source and the mass analyzer are capable of providing an ion beam. The wafer driving mechanism is configured to drive a wafer along only a first direction. The aperture mechanism has an aperture for filtering the ion beam before the wafer is implanted. The aperture driving mechanism is configured to drive the aperture along a second direction intersecting the first direction. By moving the wafer and the aperture along different directions separately, the projection of the ion beam can achieve a two-dimensional implantation on the wafer. Here, at least one of the directions is optionally parallel to the longer dimension of the two-dimensional cross-section of the ion beam.

    Abstract translation: 公开了一种用于在晶片上实现二维注入的离子注入机和离子注入方法。 离子注入机包括离子源，质量分析器，晶片驱动机构，孔径机构和孔径驱动机构。 离子源和质量分析仪能够提供离子束。 晶片驱动机构构造成仅沿第一方向驱动晶片。 光圈机构具有用于在晶片植入之前对离子束进行过滤的孔。 孔径驱动机构构造成沿着与第一方向相交的第二方向驱动孔。 通过分别沿不同方向移动晶片和孔，离子束的投影可以在晶片上实现二维注入。 这里，至少一个方向可选地平行于离子束的二维横截面的较长尺寸。

    Method of inspecting a specimen surface, apparatus and use of fluorescent material
    8.
    发明授权
    Method of inspecting a specimen surface, apparatus and use of fluorescent material 有权
    检测样品表面，设备和使用荧光材料的方法

    公开(公告)号：US07732762B2

    公开(公告)日：2010-06-08

    申请号：US11572398

    申请日：2005-07-21

    Applicant: Michiel David Nijkerk ,  Pieter Kruit

    Inventor： Michiel David Nijkerk ,  Pieter Kruit

    IPC: G01N23/00

    CPC classification number: H01J37/244 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/28 ,  H01J2237/1503 ,  H01J2237/2443 ,  H01J2237/2445 ,  H01J2237/2482

    Abstract: The invention relates to a method of inspecting a specimen surface. The method comprises the steps of generating a plurality of primary beams directed towards the specimen surface, focussing the plurality of primary beams onto respective loci on the specimen surface, collecting a plurality of secondary beams of charged particles originating from the specimen surface upon incidence of the primary beams, converting at least one of the collected secondary beams into an optical beam, and detecting the optical beam.

    Abstract translation: 本发明涉及一种检查样品表面的方法。 该方法包括以下步骤：产生指向样品表面的多个主光束，将多个主光束聚焦在样品表面上的相应位置上，在发射的样品表面上收集多个源自样品表面的带电粒子的次光束 主波束，将所收集的次波束中的至少一个转换成光束，以及检测光束。

    Method Of Inspecting A Specimen Surface, Apparatus And Use Of Fluorescent Material
    9.
    发明申请
    Method Of Inspecting A Specimen Surface, Apparatus And Use Of Fluorescent Material 有权
    检测样品表面的方法，荧光材料的使用和使用

    公开(公告)号：US20070272856A1

    公开(公告)日：2007-11-29

    申请号：US11572398

    申请日：2005-07-21

    Applicant: Michiel Nijkerk ,  Pieter Kruit

    Inventor： Michiel Nijkerk ,  Pieter Kruit

    IPC: G01N23/00 ,  G01N21/64

    CPC classification number: H01J37/244 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/28 ,  H01J2237/1503 ,  H01J2237/2443 ,  H01J2237/2445 ,  H01J2237/2482

    Abstract: The invention relates to a method of inspecting a specimen surface. The method comprises the steps of generating a plurality of primary beams directed towards the specimen surface, focussing the plurality of primary beams onto respective loci on the specimen surface, collecting a plurality of secondary beams of charged particles originating from the specimen surface upon incidence of the primary beams, converting at least one of the collected secondary beams into an optical beam, and detecting the optical beam.

    Abstract translation: 本发明涉及一种检查样品表面的方法。 该方法包括以下步骤：产生指向样品表面的多个主光束，将多个主光束聚焦在样品表面上的相应位置上，在发射的样品表面上收集多个源自样品表面的带电粒子的次光束 主波束，将所收集的次波束中的至少一个转换成光束，以及检测光束。

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