公开(公告)号：US20130130484A1

公开(公告)日：2013-05-23

申请号：US13746257

申请日：2013-01-21

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： ZHIMIN WAN ,  John D. POLLOCK ,  Don BERRIAN

IPC: H01L21/265

CPC classification number: H01L21/265 ,  C23C14/04 ,  C23C14/48 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

Abstract translation: 公开了一种离子注入机和离子注入方法。 基本上，晶片沿着一个方向移动，并且具有孔的孔径机构沿着另一个方向移动，使得被孔径过滤的离子束的投影面积在晶片上被二维地扫描。 因此，可以简化移动晶片所需的硬件和/或操作。 此外，当提供带状离子束时，孔的形状/尺寸可以类似于传统点波束的尺寸/形状，从而可以实现传统的二维扫描。 可选地，当将离子束注入到晶片中时，可以固定离子束路径而不扫描离子束，而在穿过离子束的孔移动期间，孔径的区域也可以是可调节的。