公开(公告)号：US20130299722A1

公开(公告)日：2013-11-14

申请号：US13945013

申请日：2013-07-18

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： CHENG-HUI SHEN ,  ZHIMIN WAN

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24542

Abstract: An ion implantation method and an ion implanter with a beam profiler are proposed in this invention. The method comprises setting scan conditions, detecting the ion beam profile, calculating the dose profile according to the detected ion beam profile and scan conditions, determining the displacement for ion implantation and implanting ions on a wafer surface. The ion implanter used the beam profiler to detect the ion beam profile, calculate dose profile and determine the displacement and used the displacement in ion implantation for optimizing, wherein the beam profiler comprises a body with ion channel and detection unit behind the ion channel in the body for beam profile detection. The beam profiler may be a 1-dimensional, 2-dimensional or angle beam profiler.

Abstract translation: 本发明提出了一种具有光束轮廓仪的离子注入方法和离子注入机。 该方法包括设置扫描条件，检测离子束分布，根据检测到的离子束分布和扫描条件计算剂量分布，确定离子注入的位移和在晶片表面上注入离子。 离子注入机使用光束轮廓仪检测离子束轮廓，计算剂量分布并确定位移，并使用离子注入中的位移进行优化，其中光束轮廓仪包括具有离子通道的主体和离子通道后面的检测单元 用于光束轮廓检测的主体。 光束轮廓仪可以是一维的，二维的或角度的光束分析器。

公开(公告)号：US20140161987A1

公开(公告)日：2014-06-12

申请号：US14183320

申请日：2014-02-18

Applicant: ADVANCED ION BEAM TECHNOLOGY., INC.

Inventor： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DONALD WAYNE BERRIAN ,  CAUSON KO-CHUAN JEN

IPC: C23C14/48

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US20130130484A1

公开(公告)日：2013-05-23

申请号：US13746257

申请日：2013-01-21

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： ZHIMIN WAN ,  John D. POLLOCK ,  Don BERRIAN

IPC: H01L21/265

CPC classification number: H01L21/265 ,  C23C14/04 ,  C23C14/48 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

Abstract translation: 公开了一种离子注入机和离子注入方法。 基本上，晶片沿着一个方向移动，并且具有孔的孔径机构沿着另一个方向移动，使得被孔径过滤的离子束的投影面积在晶片上被二维地扫描。 因此，可以简化移动晶片所需的硬件和/或操作。 此外，当提供带状离子束时，孔的形状/尺寸可以类似于传统点波束的尺寸/形状，从而可以实现传统的二维扫描。 可选地，当将离子束注入到晶片中时，可以固定离子束路径而不扫描离子束，而在穿过离子束的孔移动期间，孔径的区域也可以是可调节的。